All local electronic properties of graphene on a hexagonal boron nitride (hBN) substrate exhibit spatial moir\'e patterns related to lattice constant and orientation differences between shared triangular Bravais lattices. We apply a previously derived effective Hamiltonian for the π-bands of graphene on h-BN to address the carrier-dependence of transport properties, concentrating on the conductivity features at four electrons and four holes per unit cell. These transport features measure the strength of Bragg scattering of π-electrons off the moir\'e pattern, and exhibit a striking particle-hole asymmetry that we trace to specific features of the effective Hamiltonian that we interpret physically.
@article{arxiv.1503.04312,
title = {Transport and particle-hole asymmetry in graphene on boron nitride},
author = {Ashley M. DaSilva and Jeil Jung and Shaffique Adam and Allan H. MacDonald},
journal= {arXiv preprint arXiv:1503.04312},
year = {2015}
}