Employing graphene as a template, we fabricate moir\'e superlattices by stacking bilayer or folded bilayer-bilayer graphene (BLG or fBBLG) and hexagonal boron nitride (hBN), i.e., hBN/BLG/hBN or hBN/fBBLG/hBN stacks, with a small twist angle between the graphene and one of the two hBN layers. Because of the modulation due to the hBN, higher-generation Dirac points can emerge with a narrow bandwidth and van Hove singularities. In the moir\'e superlattice devices, we can therefore access the higher-generation Dirac points by in-situ gate tuning. This study is based on our previous paper (Appl. Phys. Express 13, 035003 (2020)). Here we show more extended data by applying high magnetic fields up to ~24 T. We also comment on the temperature dependence of the resistivity and magnetoresistance with reference to the 'plain' BLG data for a comparative study.
@article{arxiv.2110.00510,
title = {Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields},
author = {Takuya Iwasaki and Motoi Kimata and Yoshifumi Morita and Shu Nakaharai and Yutaka Wakayama and Eiichiro Watanabe and Daiju Tsuya and Kenji Watanabe and Takashi Taniguchi and Satoshi Moriyama},
journal= {arXiv preprint arXiv:2110.00510},
year = {2021}
}