Related papers: Optical properties of Au-Hf thin films
Ferroelectricity in sputtered undoped-HfO$_2$ is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO$_2$, evolution of ferroelectricity with annealing and film thickness effect…
Understanding the temperature dependence of the optical properties of thin metal films is critical for designing practical devices for high temperature applications in a variety of research areas, including plasmonics and near-field…
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on the chemical properties of crystalline Ta$_2$O$_5$ films grown on Si(100) substrates by radio frequency magnetron sputtering. The atomic…
Nanocrystals of indium oxide (In$_2$O$_3$) with sizes below 10 nm were prepared in alumina matrixes by using a co-pulverization method. The used substrates such as borosilicate glasses or (100) silicon as well as the substrate temperatures…
Al$_x$Sc$_{1-x}$ thin films have been studied with compositions around Al$_3$Sc ($x$ = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films were x-ray amorphous but crystallized at 190{\deg}C, followed…
We report here sign reversal and tunability of exchange bias in AuFe cosputtered films of thickness about 63 nm. As deposited film exhibits exchange bias effect at room temperature without external triggering field and its magnitude…
Silver (Ag) mirrors for astronomical telescopes consist of multiple metallic and dielectric thin films. Furthermore, the topmost surface of such Ag mirrors needs to be covered by a protection coating. While the protection coating is often…
This article identifies the process of crystallization of thin high-$\kappa$ dielectric films and an optimal range of annealing temperature in the field of high-$\kappa$ dielectric-based metal-oxide-semiconductor (MOS) technology for its…
Reflectivity as a function of temperature for the La$_{0.67}$Ca$_{0.33}$MnO$_{3}$ (LCMO) film has been measured across the metal-insulator phase transition. The optical properties and their temperature dependence were determined in the…
Oblique angle deposited oxide thin films have opened up new dimensions in fabricating optical interference devices with tailored refractive index profile along thickness by tuning its microstructure by varying angle of deposition.…
Indium-tin oxide (ITO) is a crucial functional layer for the optoelectronic applications, such as non-volatile color display thin films based on the ITO/phase-change material (PCM)/ITO/reflective metal multilayer structures on a silicon…
Light-matter interaction at the atomic scale rules fundamental phenomena such as photoemission and lasing, while enabling basic everyday technologies, including photovoltaics and optical communications. In this context, plasmons --the…
In this study we report on the film growth and characterization of thin (approximately 50 nm thick) Ti-Fe-C films deposited on amorphous quartz. The experimental studies have been complemented by first principles density functional theory…
Temperature and fluence dependence of the transient photoinduced reflectivity and the magnetooptical Kerr angle was measured in two Pr0.6Ca0.4MnO3 thin films subject to tensile and compressive substrate-induced strain. A photoinduced…
The dielectric properties of NiO thin films grown by pulsed laser deposition have been studied as a function of strain at temperature from 10 to 300 K. Above 150 K, the contribution of space-charge polarization to the dielectric…
The dielectric properties of noncrystalline hafnium silicon oxynitride (HfSiON) films with a variety of atomic compositions were investigated. The films were deposited by reactive sputtering of Hf and Si in an O, N, and Ar mixture ambient.…
Epitaxially grown full Heusler alloy of Rh2MnSb thin films were prepared for the first time using DC magnetron sputtering. The films were deposited on MgO [001] substrates with a deposition temperature of 600{\deg}C, 700{\deg}C, and…
The synthesis of the photochromic YHO films is based on the oxidation of deposited yttrium hydride in ambient conditions. The actual state of the films during the deposition process, which is influenced by the deposition pressure and the…
Nanocrystalline n-AlN:Er thin films were deposited on (001) Silicon substrates by r. f. magnetron sputtering at room temperature to study the correlation between 1.54 $\mu$m IR photoluminescence (PL) intensity, AlN crystalline structure and…
Further development of nuclear power plant technology relies heavily on materials durability under operating conditions. Estimating the materials performance in the operando tests is crucial. In this paper, the mechanical behavior of thin…