AlxSc1−x thin films have been studied with compositions around Al3Sc (x = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films were x-ray amorphous but crystallized at 190{\deg}C, followed by recrystallization at 440{\deg}C. After annealing at 500{\deg}C, 24 nm thick stoichiometric Al3Sc showed a resistivity of 12.6 μΩcm, limited by a combination of grain boundary and point defect (disorder) scattering. Together with ab initio calculations that found a mean free path of the charge carriers of 7 nm for stoichiometric Al3Sc, these results indicate that Al3Sc bears promise for future interconnect metallization schemes. Challenges remain in minimizing the formation of secondary phases as well as in the control of the non-stoichiometric surface oxidation and interfacial reactions with underlying dielectrics.
@article{arxiv.2310.20485,
title = {Al$_3$Sc thin films for advanced interconnect applications},
author = {Jean-Philippe Soulié and Kiroubanand Sankaran and Valeria Founta and Karl Opsomer and Christophe Detavernier and Joris Van de Vondel and Geoffrey Pourtois and Zsolt Tőkei and Johan Swerts and Christoph Adelmann},
journal= {arXiv preprint arXiv:2310.20485},
year = {2024}
}