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Ferroelectric tunnel junctions (FTJs) leverage polarization-dependent tunneling through ultrathin barriers to enable two-terminal, non-volatile memory and logic. Although conceptually appealing, the practical implementation of conventional…

The demand for high-quality neurostimulation, driven by the development of brain-computer interfaces, has outpaced the capabilities of passive microelectrode-arrays, which are limited by channel-count and biocompatibility. This work…

Neurons and Cognition · Quantitative Biology 2024-12-04 Haobin Zhou , Bowen Liu , Taoming Guo , Hanbin Ma , Chen Jiang

As computing power demands continue to grow, superconducting electronics present an opportunity to reduce power consumption by increasing the energy efficiency of digital logic and memory. A key milestone for scaling this technology is the…

Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers.…

Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These…

Mesoscale and Nanoscale Physics · Physics 2020-03-24 Jinshui Miao , Xiwen Liu , Kiyoung Jo , Kang He , Ravindra Saxena , Baokun Song , Huiqin Zhang , Jiale He , Myung-Geun Han , Weida Hu , Deep Jariwala

Vertical field effect transistors (VFETs) show many advantages such as high switching speed, low operating voltage, low power consumption, and miniaturization over lateral FETs. However, VFET still faces the main challenges of high…

Computational Physics · Physics 2025-01-08 Sirsendu Ghosh , Anamika Devi Laishram , Pramod Kumar

Demonstration of ultra-low energy switching mechanisms is an imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) orders and their manipulation promises an ideal combination of state variables…

Bismuth ferrite (BiFeO3) is one of the most promising multiferroics with a sufficiently high ferroelectric (FE) and antiferromagnetic transition temperatures, and magnetoelectric (ME) coupling coefficient at room temperature, and thus it is…

Atomically thin, single-crystalline transition metal dichalcogenides (TMDCs) grown via chemical vapor deposition (CVD) on sapphire substrates exhibit exceptional mechanical and electrical properties, positioning them as excellent channel…

Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…

Mesoscale and Nanoscale Physics · Physics 2017-03-08 Fan W. Chen , Hesameddin Ilatikhameneh , Tarek A. Ameen , Gerhard Klimeck , Rajib Rahman

Frequency multipliers, a class of essential electronic components, play a pivotal role in contemporary signal processing and communication systems. They serve as crucial building blocks for generating high-frequency signals by multiplying…

Emerging Technologies · Computer Science 2024-01-01 Haotian Xu , Jianyi Yang , Cheng Zhuo , Thomas Kämpfe , Kai Ni , Xunzhao Yin

The exciting field of stretchable electronics (SE) promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable…

Instrumentation and Detectors · Physics 2017-09-14 Salman Shafqat , Johan P. M. Hoefnagels , Angel Savov , Shivani Joshi , Ronald Dekker , Marc G. D. Geers

InGaZnO (IGZO) channel FeFETs have attracted notable interest thanks to their advances in endurance. This work evaluates the viability of NOR-type IGZO FeFETs for readcentric AI inference workloads via design-technology cooptimization…

Thin film ferroelectric devices with ultralow power operation, non-volatile data retention and fast and reliable switching are attractive for non-volatile memory and as synaptic weight elements. However, low thermal budget ferroelectric…

Applied Physics · Physics 2024-12-17 Padma Srivari , Ella Paasio , Xinye Li , Sayani Majumdar

The field effect in metal-oxide-semiconductor (MOS) capacitors plays a key role in field-effect transistors (FETs), which are the fundamental building blocks of modern digital integrated circuits. Recent works show that the field effect can…

Optics · Physics 2016-08-03 Zhaolin Lu , Peichuan Yin , Kaifeng Shi

Thanks to their unique properties single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially…

Mesoscale and Nanoscale Physics · Physics 2020-06-30 Cedric Klinkert , Áron Szabó , Christian Stieger , Davide Campi , Nicola Marzari , Mathieu Luisier

Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable…

We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract…

Freestanding ferroelectric membranes are promising for flexible electronics, nonvolatile memory, photonics, and spintronics, but their synthesis is challenged by the need for reproducibility with precise stoichiometric control. Here, we…

Materials Science · Physics 2025-10-07 S. Choo , S. Varshney , J. Shah , A. K. Manjeshwar , D. K. Lee , K. A. Mkhoyan , R. D. James , B. Jalan

With the staggering increase of edge compute applications like Internet-of-Things (IoT) and artificial intelligence (AI), the demand for fast, energy-efficient on-chip memory is growing. While the fast and mature static random-access memory…

Emerging Technologies · Computer Science 2026-03-30 Albi Mema , Simon Thomann , Narendra Singh Dhakad , Hussam Amrouch