Related papers: Scalable CMOS-BEOL compatible AlScN/2D Channel FE-…
We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility…
Scalability and performance of current flash memories can be improved substantially by replacing the floating poly-Si gate by a layer of Si dots. This multi-dot layer can be fabricated CMOS-compatibly in very thin gate oxide by ion beam…
This paper introduces the first tunable ferroelectric capacitor (FeCAP) based unreleased RF MEMS resonator, integrated seamlessly in Texas Instruments' 130nm Ferroelectric RAM (FeRAM) technology. An array of FeCAPs in this complementary…
Low-dimensional multiferroic materials hold great promises in miniaturized device applications such as nanoscale transducers, actuators, sensors, photovoltaics, and nonvolatile memories. Here, using first-principles theory we predict that…
A promising approach to the next generation of low-power, functional, and energy-efficient electronics relies on novel materials with coupled magnetic and electric degrees of freedom. In particular, stripy antiferromagnets often exhibit…
This paper investigates and compares through a comprehensive TCAD analysis 2D and 3D simulations for ferroelectric based FETs. We provide clear evidence that the multiple read conductance values experimentally observed in FeFETs stem from…
We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off…
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a…
Two-dimensional (2D) materials have been used extensively in various fields due to their unique physical and chemical properties. Among their diverse applications, field-effect transistor biosensors (bio-FETs) promise a brilliant prospect…
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel…
Single ferroelectric memcapacitor-based time-domain (TD) content-addressable memory (CAM) is proposed and experimentally demonstrated for high reliability and density. The proposed TD CAM features the symmetric capacitance-voltage…
All-electric-controlled nonvolatile spin field-effect transistors (SFETs) based on two-dimensional (2D) multiferroic van der Waals (vdW) heterostructures hold great promise for advanced spintronics applications. However, their performance…
Compute-in-memory (CiM) is a promising approach to alleviating the memory wall problem for domain-specific applications. Compared to current-domain CiM solutions, charge-domain CiM shows the opportunity for higher energy efficiency and…
The Heusler ferromagnetic (FM) compound Co2FeAl interfaced with a high-spin orbit coupling non-magnetic (NM) layer is a promising candidate for energy efficient spin logic circuits. The circuit potential depends on the strength of angular…
Ferroelectric-based capacitive crossbar arrays have been proposed for energy-efficient in-memory computing in the charge domain. They combat the challenges like sneak paths and high static power faced by resistive crossbar arrays but are…
Abstract: Bionic learning with fused sensing, memory and processing functions outperforms artificial neural networks running on silicon chips in terms of efficiency and footprint. However, digital hardware implementation of bionic learning…
Fluxonium qubits combine long coherence times with strong anharmonicity, making them a promising platform for scalable superconducting quantum processors. Recent experiments have demonstrated high-fidelity operations in multi-qubit…
We study the impact of top SiO2 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistor (FeFET) with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate structure. We find that the MW increases with the…
Over the past decades, the relentless scaling and mass production of flash memory have underpinned the data-centric era. Yet charge-trap-based 3D NAND flash is now constrained by intrinsic physical and architectural limits, including…
Printed and flexible electronics (PFE) have emerged as the ubiquitous solution for application domains at the extreme edge, where the demands for low manufacturing and operational cost cannot be met by silicon-based computing. Built on…