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This paper presents the effectiveness of various stress conditions (mainly voltage and frequency) on detecting the resistive shorts and open defects in deep sub-micron embedded memories in an industrial environment. Simulation studies on…
Resistance-change random access memory (RRAM) devices are nanoscale metal-insulator-metal structures that can store information in their resistance states, namely the high resistance (HRS) and low resistance (LRS) states. They are a…
Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…
As one of the most promising emerging non-volatile memory (NVM) technologies, spin-transfer torque magnetic random access memory (STT-MRAM) has attracted significant research attention due to several features such as high density, zero…
RowHammer stands out as a prominent example, potentially the pioneering one, showcasing how a failure mechanism at the circuit level can give rise to a significant and pervasive security vulnerability within systems. Prior research has…
A power transformer winding is usually subject to mechanical stress and tension because of improper transportation or operation. Radial deformation (RD) is an example of mechanical stress that can impact power transformer operation through…
To improve power efficiency, researchers are experimenting with dynamically adjusting the supply voltage of systems below the nominal operating points. However, production systems are typically not allowed to function on voltage settings…
In order to shed more light on how RowHammer affects modern and future devices at the circuit-level, we first present an experimental characterization of RowHammer on 1580 DRAM chips (408x DDR3, 652x DDR4, and 520x LPDDR4) from 300 DRAM…
The demand for accurate information about the internal structure and characteristics of dynamic random-access memory (DRAM) has been on the rise. Recent studies have explored the structure and characteristics of DRAM to improve processing…
As process technology scales down to smaller dimensions, DRAM chips become more vulnerable to disturbance, a phenomenon in which different DRAM cells interfere with each other's operation. For the first time in academic literature, our ISCA…
Many commercially available memory chips are fabricated worldwide in untrusted facilities. Therefore, a counterfeit memory chip can easily enter into the supply chain in different formats. Deploying these counterfeit memory chips into an…
Due to the small size of nanoscale devices, they are highly prone to process disturbances which results in manufacturing defects. Some of the defects are randomly distributed throughout the nanodevice layer. Other disturbances tend to be…
Increased process variability and reliability issues present a major challenge for future SRAM trends. Non-intrusive and accurate SRAM stability measurement is crucial for estimating yield in large SRAM arrays. Conventional SRAM variability…
Radiation-induced soft errors are one of the most challenging issues in Safety Critical Real-Time Embedded System (SACRES) reliability, usually handled using different flavors of Double Modular Redundancy (DMR) techniques. This solution is…
Resistive random access memory (RRAM) is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability. This makes it harder to…
This paper reports on detailed measurements of the performance of Resistive Plate Chambers in a proton beam with variable intensity. Short term effects, such as dead time, are studied using consecutive events. On larger time scales, for…
Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips.…
The demand for precise information on DRAM microarchitectures and error characteristics has surged, driven by the need to explore processing in memory, enhance reliability, and mitigate security vulnerability. Nonetheless, DRAM…
Modern DRAM is vulnerable to read disturbance (e.g., RowHammer and RowPress) that significantly undermines the robust operation of the system. Repeatedly opening and closing a DRAM row (RowHammer) or keeping a DRAM row open for a long…
Resistive Random-Access Memory (ReRAM) crossbar arrays are promising candidates for in-situ matrix-vector multiplication (MVM), a frequent operation in Deep Learning algorithms. Despite their advantages, these emerging non-volatile memories…