Related papers: XDWM: A 2D Domain Wall Memory
Domain wall propagation in cylindrical nanowires with modulations of diameter is a key phenomenon to design physics-oriented devices, or a disruptive three-dimensional magnetic memory. This chapter presents a combination of analytical…
Domain-wall memory (DWM) has SRAM class access performance, low energy, high endurance, high density, and CMOS compatibility. Recently, shift reliability and processing-using-memory (PuM) proposals developed a need to count the number of…
We report current-induced domain wall motion (CIDWM) in Ta\Co20Fe60B20\MgO nanowires. Domain walls are observed to move against the electron flow when no magnetic field is applied, while a field along the nanowires strongly affects the…
Magnetic racetrack memory (RTM) uses a series of either domains or skyrmions as data bits along nanowires. However, it lacks reading error detection capability in nanowires, which requires high electric current density for the deterministic…
Domain wall propagation in modulated-diameter cylindrical nanowires is a key phenomenon to be studied with a view to designing three-dimensional magnetic memory devices. This paper presents a theoretical study of transverse domain wall…
Domain walls (DWs) in magnetic nanowires are promising candidates for a variety of applications including Boolean/unconventional logic, memories, in-memory computing as well as magnetic sensors and biomagnetic implementations. They show…
Resistive Random Access Memory (RRAM) and Phase Change Memory (PCM) devices have been popularly used as synapses in crossbar array based analog Neural Network (NN) circuit to achieve more energy and time efficient data classification…
This paper introduces an oscillator scheme based on the oscillations of magnetic domain walls due to spin-polarized currents, where the current is injected perpendicular to the sample plane in a localized part of a nanowire. Depending on…
A domain wall (DW) in a ferromagnetic nanowire is composed of elementary topological bulk and edge defects with integer and fractional winding numbers, respectively, whose relative spatial arrangement determines the chirality of the DW.…
Understanding and manipulating nanoscale domain wall (DW) dynamics is a central topic in magnetism and spintronics for its promising applications in logic and memory devices. In most magnetic systems, inertia affects only transient DW…
Recent studies have predicted extraordinary properties for transverse domain walls in cylindrical nanowires: zero depinning current, the absence of the Walker breakdown, and applications as domain wall oscillators. In order to reliably…
Using numerical and analytical micromagnetics we calculated the switching fields and energy barriers of the composite (exchange spring) magnetic recording media, which consist of layers with high and low magnetocrystalline anisotropy. We…
The current-driven motion of magnetic domain walls (DWs) is the working principle of magnetic racetrack memories. In this type of spintronic technology, high current densities are used to propel DW motion in magnetic nanowires, causing…
We demonstrate movement of a head-to-head domain wall through a magnetic nanowire simply by passing an electrical current through the domain wall and without any external magnetic field applied. The effect depends on the sense and magnitude…
We report the realization of a planar transverse domain wall (TDW) with arbitrary tilting angle in a magnetic biaxial nanowire under a transverse magnetic field (TMF) pulse with fixed strength and optimized orientation profile. We smooth…
Data copy is a widely-used memory operation in many programs and operating system services. In conventional computers, data copy is often carried out by two separate read and write transactions that pass data back and forth between the DRAM…
Domain wall (DW) motion is a crucial process involved in magnetization reversal, be it under magnetic field or spin-polarized current stimulus. In most cases DW speed does not exceed $\approx$100m/s and collapses above a given threshold of…
We propose a novel analog memory device utilizing the gigantic magnetic Weyl semimetal (MWSM) domain wall (DW) magnetoresistance. We predict that the nucleation of domain walls between contacts will strongly modulate the conductance and…
Developing ultra-low-energy superconducting computing and fault-tolerant quantum computing will require scalable superconducting memory. While conventional superconducting logic-based memory cells have facilitated early demonstrations,…
With recent trend of wearable devices and Internet of Things (IoTs), it becomes attractive to develop hardware-based deep convolutional neural networks (DCNNs) for embedded applications, which require low power/energy consumptions and small…