We report current-induced domain wall motion (CIDWM) in Ta\Co20Fe60B20\MgO nanowires. Domain walls are observed to move against the electron flow when no magnetic field is applied, while a field along the nanowires strongly affects the domain wall motion direction and velocity. A symmetric effect is observed for up-down and down-up domain walls. This indicates the presence of right-handed domain walls, due to a Dzyaloshinskii-Moriya interaction (DMI) with a DMI coefficient D=+0.06 mJ/m2. The positive DMI coefficient is interpreted to be a consequence of boron diffusion into the tantalum buffer layer during annealing. In a Pt\Co68Fe22B10\MgO nanowire CIDWM along the electron flow was observed, corroborating this interpretation. The experimental results are compared to 1D-model simulations including the effects of pinning. This advanced modelling allows us to reproduce the experiment outcomes and reliably extract a spin-Hall angle {\theta}SH=-0.11 for Ta in the nanowires, showing the importance of an analysis that goes beyond the currently used model for perfect nanowires.
@article{arxiv.1409.3753,
title = {Interfacial Dzyaloshinskii-Moriya interaction in Ta\Co20Fe60B20\MgO nanowires},
author = {R. Lo Conte and E. Martinez and A. Hrabec and A. Lamperti and T. Schulz and L. Nasi and L. Lazzarini and F. Maccherozzi and S. S. Dhesi and B. Ocker and C. H. Marrows and T. A. Moore and M. Klaeui},
journal= {arXiv preprint arXiv:1409.3753},
year = {2015}
}