Related papers: XDWM: A 2D Domain Wall Memory
The propagation of a head-to-head magnetic domain-wall (DW) or a tail-to-tail DW in a magnetic nanowire under a static field along the wire axis is studied. Relationship between the DW velocity and DW structure is obtained from the energy…
Sliding ferroelectricity in bilayer van der Waals materials exhibits ultrafast switching speed and fatigue resistance during the polarization switching, offering an avenue for the design of memories and neuromorphic devices. The unique…
We report the results of experimental investigations of controlled domain wall (DW) pinning in a ferromagnetic nanowire (NW) by stray fields of two uniformly magnetized bistable ferromagnetic nanoparticles (NPs) placed on either side of the…
Understanding the domain wall dynamics is an important issue in modern magnetism. Here we present results of domain wall displacement in curved cylindrical nanowires at a constant magnetic field. We show that the average velocity of a…
Understanding the domain wall (DW) dynamics in magnetic nanowires (NW) is crucial for spintronic-based applications demanding the use of DWs as information carriers. This work focuses on the dynamics of a DW displacing along a bent NW with…
Non-volatile memory (NVM) is a class of promising scalable memory technologies that can potentially offer higher capacity than DRAM at the same cost point. Unfortunately, the access latency and energy of NVM is often higher than those of…
Training of deep neural networks (DNNs) is a computationally intensive task and requires massive volumes of data transfer. Performing these operations with the conventional von Neumann architectures creates unmanageable time and power…
Magnetic domain walls (DWs) in nanostructures are low-dimensional objects that separate regions with uniform magnetisation. Since they can have different shapes and widths, DWs are an exciting playground for fundamental research, and became…
Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the…
With the emergence of Non-Volatile Memories (NVMs) and their shortcomings such as limited endurance and high power consumption in write requests, several studies have suggested hybrid memory architecture employing both Dynamic Random Access…
The time it takes to accelerate an object from zero to a given velocity depends on the applied force and the environment. If the force ceases, it takes exactly the same time to completely decelerate. A magnetic domain wall (DW) is a…
With the rise in in-memory computing architectures to reduce the compute-memory bottleneck, a new bottleneck is present between analog and digital conversion. Analog content-addressable memories (ACAM) are being recently studied for…
A skyrmion is a topological texture in the continuum field theory. Recent experimental observation of skyrmions in chiral magnet evokes a flourish of its extensive study. Skyrmion is expected to be a key component of the next generation…
Networks of nanowires are currently being explored for a range of applications in brain-like (or neuromorphic) computing, and especially in reservoir computing (RC). Fabrication of real-world computing devices requires that the nanowires…
As modern AI workloads increasingly rely on heterogeneous accelerators, ensuring high-bandwidth and layout-flexible data movements between accelerator memories has become a pressing challenge. Direct Memory Access (DMA) engines promise high…
Current induced domain wall (DW) motion has been investigated in a 600-nm wide nanowire using multilayer film with a structure of Ta(5 nm)/Pd(5 nm)/[CoFe(0.4 nm)/Pd(1.2 nm)]$_{15}$/Ta(5 nm)in terms of anomalous Hall effect measurements. It…
The interplay of nanoscale electronic domains underpins many emergent phenomena of quantum materials, including the competition between charge density waves (CDW) and superconductivity in high-Tc cuprates, or the storage of information in…
Maintaining benefits of CMOS technology scaling is becoming challenging due to increased manufacturing complexities and unwanted passive power dissipations. This is particularly challenging in SRAM, where manufacturing precision and leakage…
The manipulation of geometrically constrained magnetic domain walls (DWs) in nanoscale magnetic strips has attracted much interest recently, with proposals for prospective memory and logic devices. Here we propose to use the high…
An energy-efficient voltage controlled domain wall device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling in the presence of room temperature thermal noise. By controlling the domain wall motion…