Related papers: LGAD Detector Concept for TOPSiDE Project

The International Large Detector (ILD) is a concept for a detector at the International Linear Collider, ILC. The ILC will collide electrons and positrons at energies of initially 500 GeV, upgradeable to 1 TeV. The ILC has an ambitious…

Silicon carbide (SiC) is a promising material for radiation monitoring in harsh environments, due to its low dark current, high breakdown voltage, high thermal conductivity, and radiation hardness.~This work investigates a SiC-based…

In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche…

We present the first beam test results with centimeter-scale AC-LGAD strip sensors, using the Fermilab Test Beam Facility and sensors manufactured by the Brookhaven National Laboratory. Sensors of this type are envisioned for applications…

We describe DSiD, a fast simulation Delphes detector for the International Linear Collider (ILC) based on the full simulation performance of the SiD detector. SiD is one of two detectors described in the ILC Technical Design Report (TDR).…

We present the results of an extensive evaluation of strip and pixel AC-LGAD sensors tested with a 120 GeV proton beam, focusing on the influence of design parameters on the sensor temporal and spatial resolutions. Results show that…

In this paper we present a complete characterization of the first batch of Resistive AC-Coupled Silicon Detectors, called RSD1, designed at INFN Torino and manufactured by Fondazione Bruno Kessler (FBK) in Trento. With their 100%…

The response of Low Gain Avalanche Diodes (LGADs), which are a type of thin silicon detector with internal gain, to X-rays of energies between 6-70 keV was characterized at the SLAC light source (SSRL). The utilized beamline at SSRL was…

Letter of intent describing SiD (Silicon Detector) for consideration by the International Linear Collider IDAG panel. This detector concept is founded on the use of silicon detectors for vertexing, tracking, and electromagnetic calorimetry.…

With the emergence of advanced Silicon (Si) sensor technologies such as LGADs, it is now possible to achieve exceptional time measurement precision below 50 ps. As a result, the implementation of time-of-flight (TOF) particle identification…

We propose a joint TDC and multi-time-gated imaging single-photon avalanche diode LiDAR sensor featuring a maximum detection range of 108m with a minimum depth resolution (least significant bit) of 2.93mm, fabricated in 110nm CMOS…

A novel methodology, named the diffusion profile method, is proposed in this research to measure the electric field of a low gain avalanche detector (LGAD).The proposed methodology utilizes the maximum of the time derivative of the edge…

The fast timing MPGD is a micro-pattern gaseous detector conceived for achieving sub-nanosecond time resolution while maintaining the ability to instrument large areas in high-rate environments; applications of such technology are…

Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and the junction of the sensor. The presence of gain…

The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point,…

A new gain implant design has recently been introduced to enhance the radiation resistance of low-gain avalanche diodes (LGADs) to the extreme fluences anticipated in future hadron colliders like FCC-hh. This design utilises an engineered…

The High-Acceptance DiElectron Spectrometer (HADES) at GSI Darmstadt consists of a 6-coil toroidal magnet centered on the beam axis and six identical detection sections located between the coils and covering polar angles between $18^\circ$…

The development of Low-Gain Avalanche Detectors has opened up the possibility of manufacturing silicon detectors with signal larger than that of traditional sensors. In this paper we explore the timing performance of Low-Gain Avalanche…

Integrated quantum photonics, which allows for the development and implementation of chip-scale devices, is recognized as a key enabling technology on the road towards scalable quantum networking schemes. However, many state-of-the-art…

Silicon single-photon avalanche diode (SPAD) is a core device for single-photon detection in the visible and the near-infrared range, and widely used in many applications. However, due to limits of the structure design and device…