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We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide…
Low-loss optical communication requires light sources at 1.5um wavelengths. Experiments showed without much theoretical guidance that InAs/GaAs quantum dots (QDs) may be tuned to such wavelengths by adjusting the In fraction in an…
Fluxonium qubits demonstrate exceptional potential for quantum processing; yet, realizing scalable architectures using them remains challenging. We propose a fluxonium-based square-grid design with fast $\sim63$~ns controlled-Z (CZ) gates,…
A novel defect control approach based on laminated HfO$_2$/ZrO$_2$ with multifunctional TiN/Mo/TiOxNy electrode is proposed to significantly improve the endurance and data retention in HZO-based ferroelectric capacitor. The O-rich interface…
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…
Recently, analog compute-in-memory (CIM) architectures based on emerging analog non-volatile memory (NVM) technologies have been explored for deep neural networks (DNN) to improve energy efficiency. Such architectures, however, leverage…
Nanoscale molecular junctions are celebrated nanoelectronic devices for mimicking several electronic functions including rectifiers, sensors, wires, switches, transistors, and memory but capacitive behavior is nearly unexplored. Capacitors…
The Mixture-of-Experts (MoE) models have emerged as the state-of-the-art paradigm for scaling up large language models (LLMs) without proportionally increased computational cost. However, its on-device deployment faces a critical challenge…
Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz after de-embedding for the parasitic…
Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems. Convergence of…
Guiding and manipulating GHz frequency acoustic waves in $\mu$m-scale waveguides and resonators opens up new degrees of freedom to manipulate radio frequency (RF) signals in chip-scale platforms. A critical requirement for enabling…
The growing demand for dense, energy-efficient, and high-frequency signal processing continues to drive device miniaturization. While downscaling remains a central challenge, magnons offer a promising solution as nanoscale signal carriers,…
Inverse design coupled with adjoint optimization is a powerful method to design on-chip nanophotonic devices with multi-wavelength and multi-mode optical functionalities. Although only two simulations are required in each iteration of this…
Wireless communication through dynamic spectrum allocation over microwave bands, essential to accommodate exponentially growing data traffic, requires massive array of radio-frequency (RF) filters for adaptive signal shaping at arbitrary…
Single ferroelectric memcapacitor-based time-domain (TD) content-addressable memory (CAM) is proposed and experimentally demonstrated for high reliability and density. The proposed TD CAM features the symmetric capacitance-voltage…
We systematically investigated the temperature behaviors of the electrical conductivity and Hall coefficient of two series of amorphous indium gallium zinc oxides (a-IGZO) films prepared by rf sputtering method. The two series of films are…
Thin-film gallium nitride (GaN) as a proven piezoelectric material is a promising platform for the phononic integrated circuits, which hold great potential for scalable information processing processors. Here, an unsuspended traveling…
This paper demonstrates a hafnium zirconium oxide (HZO)-based ferroelectric NEMS unimorph as the fundamental building block for very low-energy capacitive readout in-memory computing. The reported device consists of a 250 $\mu$m $\times$ 30…
Self-assembled monolayers (SAMs) have been used to improve both the positive and negative bias-stress stability of amorphous indium gallium zinc oxide (IGZO) bottom gate thin film transistors (TFTs). N-hexylphosphonic acid (HPA) and…
Flash memory based on floating gate transistor is the most widely used memory technology in modern microelectronic applications. We recently proposed a new concept of multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT) based…