Related papers: Computational Associative Memory with Amorphous In…
In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process. A maximum on-state current (ION) of 19.3 mA/{\mu}m (near 20…
In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However,…
Faithful quantum state transfer between telecom photons and microwave frequency mechanical oscillations necessitate a fast conversion rate and low thermal noise. Two-dimensional (2D) optomechanical crystals (OMCs) are favorable candidates…
The Von-Neumann bottleneck is a clear limitation for data-intensive applications, bringing in-memory computing (IMC) solutions to the fore. Since large data sets are usually stored in nonvolatile memory (NVM), various solutions have been…
Content addressable memory is popular in intelligent computing systems as it allows parallel content-searching in memory. Emerging CAMs show a promising increase in bitcell density and a decrease in power consumption than pure CMOS…
We reported here a high-performance In2O3/InZnO bilayer metal-oxide (BMO) thin-film transistor (TFT) using ultra-thin solution-processed ZrOx dielectric. A thin layer of In2O3 offers a higher carrier concentration, thereby maximizing the…
Recently, a two-dimension (2D) modulation waveform of orthogonal time-frequency-space (OTFS) has been a popular 6G candidate to replace existing orthogonal frequency division multiplexing (OFDM). The extensive OTFS researches help to make…
Floating gate transistor is the basic building block of non-volatile flash memory, which is one of the most widely used memory gadgets in modern micro and nano electronic applications. Recently there has been a surge of interest to…
Edge devices are being deployed at increasing volumes to sense and act on information from the physical world. The discrete Fourier transform (DFT) is often necessary to make this sensed data suitable for further processing -- such as by…
Channel output quantization plays a vital role in high-speed emerging memories such as the spin-torque transfer magnetic random access memory (STT-MRAM), where high-precision analog-to-digital converters (ADCs) are not applicable. In this…
Compute-in-memory (CIM) accelerators for spiking neural networks (SNNs) are promising solutions to enable $\mu$s-level inference latency and ultra-low energy in edge vision applications. Yet, their current lack of flexibility at both the…
The brain's remarkable and efficient information processing capability is driving research into brain-inspired (neuromorphic) computing paradigms. Artificial aqueous ion channels are emerging as an exciting platform for neuromorphic…
Massive multiple-input multiple-output (MIMO) avails of simple transceiver design which can tackle many drawbacks of relay systems in terms of complicated signal processing, latency, and noise amplification. However, the cost and circuit…
Understanding 4D point cloud videos is essential for enabling intelligent agents to perceive dynamic environments. However, temporal scale bias across varying frame rates and distributional uncertainty in irregular point clouds make it…
We present the design of a low-power 4-bit 1GS/s folding-flash ADC with a folding factor of two. The design of a new unbalanced double-tail dynamic comparator affords an ultra-low power operation and a high dynamic range. Unlike the…
Ferroelectric field effect transistors (FeFETs) are being actively investigated with the potential for in-memory computing (IMC) over other non-volatile memories (NVMs). Content Addressable Memories (CAMs) are a form of IMC that performs…
High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been…
As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…
Transformer decoding is constrained by both attention compute and KV-cache movement. This paper presents the Ferroelectric Charge-Domain Compute Cell (FCDC), a hafnium-zirconium-oxide (HZO) memcapacitor with an access device that stores…
Flexible intelligent metasurfaces (FIMs) show great potential for improving the wireless network capacity in an energy-efficient manner. An FIM is a soft array consisting of several low-cost radiating elements. Each element can…