Related papers: Screening effect in Spin-Hall Devices
We propose a nonequilibrium Green's function approach to study the spin-Hall effect in a two-dimensional electron system with both the Rashba and Dresselhaus spin-orbit couplings. By taking into account the long-range electron-impurity…
The direct electrical method was used to study the behavior of the spin Hall effect in a magnetic field perpendicular to the injection current in aluminum samples with resistivities that differed by two orders of magnitude at a temperature…
We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially…
In Si, spin-phonon interaction is the primary spin relaxation mechanism. At low temperatures, the absence of spin-phonon relaxation will lead to enhanced spin accumulation. Spin accumulation may change the electro-thermal transport within…
The effect of spin-orbit interaction on electron transport properties of a cross-junction structure is studied. It is shown that it results in spin polarization of left and right outgoing electron waves. Consequently, incoming electron wave…
We study the effects of spin accumulation (inside reservoirs) on electronic transport with tunneling and reflections at the gates of a quantum dot. Within the stub model, the calculation focus on the current-current correlation function for…
An expression is derived within the framework of the Debye-H\"uckel approximation for the screening length of a field in a p-type semiconductor taking into account the energy spread of immobile acceptor levels and the density of states tail…
We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/In_{x}Ga_{1-x}As heterostructures with n-type channel doping (Si) and highly doped Schottky tunnel barriers. A transverse spin current generated by an…
The spin-orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been…
Spin-conserving and spin-flip opaque reflections of electrons from a potential barrier in heterostructures are described. An electric field of the barrier is considered to be the only source of energy spin splitting in the presence of…
Resonant inelastic light scattering experiments access the low lying excitations of electron liquids in the fractional quantum Hall regime in the range $2/5 \geq \nu \geq 1/3$. Modes associated with changes in the charge and spin degrees of…
We have studied the evolution of the Spin Hall Effect in the regime where the material size responsible for the spin accumulation is either smaller or larger than the spin diffusion length. Lateral spin valve structures with Pt insertions…
The interpretation of some recent measurements of spin-dependent voltage for which the electric conduction does not play a role rises some new fundamental questions about the effects of spin-dependent heat currents. A two spin-channel model…
We present a linear response theory for stationary density accumulations in anomalous transport phenomena, such as the orbital Hall effect, where the transported density is odd under time reversal and the underlying charge is not conserved.…
We derive the transport equations for two-dimensional electron systems with spin-orbit interaction and short-range spin-independent disorder. In the limit of slow spatial variations of the electron distribution we obtain coupled diffusion…
The spin Hall effect and its inverse play key roles in spintronic devices since they allow conversion of charge currents to and from spin currents. The conversion efficiency strongly depends on material details, such as the electronic band…
Charge-to-spin conversion in inhomogeneous systems is studied theoretically. We consider free electrons subject to impurities with spin-orbit interaction and with spatially modulated distribution, and calculate spin accumulation and spin…
The anomalous Hall effect of Fe(CsAu) is investigated. Electrons with spin up and down experience a different degree of specular reflection at the FeCs interface. This yields a different mean free path for the two spin orientations. In the…
Spin precession and dephasing ("Hanle effect") provides an unambiguous means to establish the presence of spin transport in semiconductors. We compare theoretical modeling with experimental data from drift-dominated silicon spin-transport…
We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially…