Related papers: Dirac-Source Diode with Sub-unity Ideality Factor

We study the tunneling density of states (TDOS) in one-dimensional Mott insulators at energies below the charge gap. By employing nonlinear Luttinger liquid theory and density-matrix renormalization group (DMRG) simulations, we predict that…

We report on the fabrication and temperature-dependent characterization of MOCVD-grown quasi-vertical AlN Schottky barrier diodes (SBDs) on bulk AlN substrates. The SBDs exhibited high current densities exceeding 2 kA/cm2 at 10 V, with a…

Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…

An unusual electron transfer phenomenon has been identified from an n-type semiconductor to Schottky metal particles, the result of a unique metal semiconductor interface that results when the metal particles are grown from the…

In this letter, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process provides results in improving etching quality with a 0.26-nm…

Heat engines made of quantum-dot (QD) superlattice nanowires (SLNWs) offer promising applications in energy harvesting due to the reduction of phonon thermal conductivity. In solid state electrical generators (refrigerators), one needs to…

In this tutorial, we pedagogically review recent developments in the field of non-interacting fermionic phases of matter, focussing on the low energy description of higher-order topological insulators in terms of the Dirac equation. Our aim…

The electrical contact to two-dimensional (2D)-semiconductor materials are decisive to the electronic performance of 2D-semiconductor field-effect devices (FEDs). The presence of a Schottky barrier often leads to a large contact resistance,…

As quantum technologies advance, a fundamental challenge is mitigating noise and backscattering in superconducting circuits to achieve scalable, high-fidelity operations. Conventional superconducting components lack directionality, causing…

ITER (International Thermonuclear Experimental Reactor) static magnetic field (SMF) test facility requires a DC power supply with low voltage, high current, and high stability. Due to the limitation ofswitching loss, there is a…

In this paper, we report a new 4H-SiC Lateral Dual Sidewall Schottky (LDSS) rectifier on a highly doped drift layer consisting of a high-barrier sidewall Schottky contact on top of the low-barrier Schottky contact. Using two-dimensional…

Recent experiments shown that graphene epitaxially grown on Silicon Carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics. With an accurate model, we explore the design parameter space for a fully…

Power dissipation has become a major obstacle in performance scaling of modern integrated circuits, and has spurred the search for devices operating at lower voltage swing. In this letter, we study p-i-n band-to-band tunneling field effect…

In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by…

Thermoelectric (TE) conversion in conducting materials is of eminent importance for providing renewable energy and solid-state cooling. Although traditionally, the Seebeck effect plays a key role for the TE figure of merit zST, it…

Thermal diodes that enable directional heat transport are essential for advanced thermal management in microelectronics, energy systems, and thermal logic devices. However, existing designs based on phase-change materials, nanostructures,…

The supercurrent diode effect (SDE), characterized by nonreciprocal critical currents, represents a promising building block for future dissipationless electronics and quantum circuits. Realizing SDE requires breaking both time-reversal and…

We calculate the mode-dependent transmission probability of massless Dirac fermions through an ideal strip of graphene (length L, width W, no impurities or defects), to obtain the conductance and shot noise as a function of Fermi energy. We…

Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in…

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on…