Related papers: Towards Scalable, Energy-Efficient and Ultra-Fast …
Data recovery has long been a focus of the electronics industry for decades by security experts, focusing on hard disk recovery, a type of non-volatile memory. Unfortunately, none of the existing research, neither from academia, industry,…
Processing-using-DRAM has been proposed for a limited set of basic operations (i.e., logic operations, addition). However, in order to enable the full adoption of processing-using-DRAM, it is necessary to provide support for more complex…
The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive…
The Kerr nonlinearity can be a key enabler for many digital photonic circuits as it allows access to bistable states needed for all-optical memories and switches. A common technique is to use the Kerr shift to control the resonance…
Despite the impressive search rate of one key per clock cycle, the update stage of a random-access-memory-based content-addressable-memory (RAM-based CAM) always suffers high latency. Two primary causes of such latency include: (1) the…
Oxide-based Random Access Memory (OxRAM), is part of the larger family of Resistive RAM (RRAM) memories. Generally OxRAM cells consist of a transition metal oxide (typically HfO2, Ta2O5, TiO2) sandwiched between two metal electrodes…
A random access memory, or RAM, is a device that, when interrogated, returns the content of a memory location in a memory array. A quantum RAM, or qRAM, allows one to access superpositions of memory sites, which may contain either quantum…
This paper presents a spiking neural network (SNN) accelerator made using fully open-source EDA tools, process design kit (PDK), and memory macros synthesized using OpenRAM. The chip is taped out in the 130 nm SkyWater process and…
Scalability presents a central platform challenge for the components of current quantum network implementations that can be addressed by microfabrication techniques. We demonstrate a high-bandwidth optical memory using a warm alkali atom…
Crossbar arrays using emerging non-volatile memory technologies such as Resistive RAM (ReRAM) offer high density, fast access speed and low-power. However the bandwidth of the crossbar is limited to single-bit read/write per access to avoid…
Recently, interest in programmable photonics integrated circuits has grown as a potential hardware framework for deep neural networks, quantum computing, and field programmable arrays (FPGAs). However, these circuits are constrained by the…
Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations…
Quantum memories with high efficiency and fidelity are essential for long-distance quantum communication and information processing. Techniques have been developed for quantum memories based on atomic ensembles. The atomic memories relying…
In recent years, remarkable advances in photonic computing have highlighted the need for photonic memory, particularly high-speed and coherent random-access memory. Addressing the ongoing challenge of implementing photonic memories is…
Networks inside current data centers comprise a hierarchy of power-hungry electronic packet switches interconnected via optical fibers and transceivers. As the scaling of such electrically-switched networks approaches a plateau, a…
Artificial intelligence (AI) hardware is positioned to unlock revolutionary computational abilities across diverse fields ranging from fundamental science [1] to medicine [2] and environmental science [3] by leveraging advanced…
Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…
Emerging resistive random-access memory (ReRAM) has recently been intensively investigated to accelerate the processing of deep neural networks (DNNs). Due to the in-situ computation capability, analog ReRAM crossbars yield significant…
This paper addresses a novel five-transistor (5T) CMOS SRAM design with high performance and reliability in 65nm CMOS, and illustrates how it reduces the dynamic power consumption in comparison with the conventional and low-power 6T SRAM…
Oblivious RAM (ORAM) is a provable secure primitive to prevent access pattern leakage on the memory bus. It serves as the intermediate layer between the trusted on-chip components and the untrusted external memory systems to modulate the…