Related papers: Holy memristor
Analog memory is of great importance in neurocomputing technologies field, but still remains difficult to implement. With emergence of memristors in VLSI technologies the idea of designing scalable analog data storage elements finds its…
The memory effect in a single crystal spin glass ($\mathrm{Cu}_{0.92}\mathrm{Mn}_{0.08}$) has been measured using \freq ac susceptibility techniques over a temperature range of $0.4 - 0.7 \, T_g$ and a model of the memory effect has been…
We suggest a possible realization of a solid-state memory capacitive (memcapacitive) system. Our approach relies on the slow polarization rate of a medium between plates of a regular capacitor. To achieve this goal, we consider a…
A pronounced irreversible electro-optical response (memory effect) has been recently observed for nematic liquid crystal (LC) EBBA doped by multi-walled carbon nanotubes (MWCNTs) near the percolation threshold of the MWCNTs (0.02-0.05 wt.…
When a spin glass is cooled down, a memory of the cooling process is imprinted in the spin structure. This memory can be disclosed in a continuous heating measurement of the ac-susceptibility. E.g., if a continuous cooling process is…
Based on the traditional polycrystalline ferroelectric Ba0.85Ca0.15Zr0.10Ti0.90O3, the 0.4 Ba0.85Ca0.15Zr0.10Ti0.90O3 0.6 Ba0.9Sr0.1Ti0.9Sn0.1O3 medium entropy material with good energy storage and electrocaloric effect performances is…
Wicking is a widely studied process in both natural and artificial systems. In many industrial applications, such as heat pipes, the wicking liquid evaporates to regulate temperature effectively. This study focuses on a simpler scenario…
Combining scanning electron microscopy (SEM) and electron-beam-induced current (EBIC) imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially…
The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such…
Flexible solution processed memristors show different behaviour dependent on the choice of electrode material. Use of gold for both electrodes leads to switchable WORM (Write Once Read Many times) resistive devices. Use of aluminium for…
Electropolishing has found wide application as the final surface treatment of metal products in mechanical engineering and instrumentation, medicine and reflective concentrators for PV cells. It was found that electropolishing (EP) not only…
Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition metal dichalcogenide monolayers, known for their unique optical properties, offer extensive…
Our paper presents a non-destructive thermal transient measurement method that is able to reveal differences even in the micron size range of MEMS structures. Devices of the same design can have differences in their sacrificial layers as…
An environmental cell high resolution electron microscope (EHREM) has been developed for in situ studies of dynamic chemical reactions on the atomic scale. It allows access to metastable intermediate phases of catalysts and to sequences of…
Organic electrochemical transistors (OECTs) underpin a range of emerging technologies, from bioelectronics to neuromorphic computing, owing to their unique coupling of electronic and ionic charge carriers. In this context, various OECT…
Laser flash melting and revitrification experiments have recently improved the time resolution of cryo-electron microscopy (cryo-EM) to the microsecond timescale, making it fast enough to observe many of the protein motions that are…
A key ingredient of quantum repeaters is entanglement distillation, i.e., the generation of high-fidelity entangled qubits from a larger set of pairs with lower fidelity. Here, we present entanglement distillation protocols based on qubit…
DC electrical degradation as a form of dielectric and resistance breakdown is a common phenomenon in thin-film devices including resistance-switching memory. To obtain design data and to probe the degradation mechanism, highly accelerated…
In 2008, researchers at the Hewlett-Packard (HP) laboratories claimed to have found an analytical physical model for a genuine memristor device [1]. The model is considered for a thin TiO_2 film containing a region which is highly…
A tungsten filament immersed in superfluid helium has strong hysteretic $I$-$V$ characteristics. By increasing the applied voltage, a remarkable current drop occurs at a transition voltage, at which the filament enters a non-ohmic hot state…