Flexible solution processed memristors show different behaviour dependent on the choice of electrode material. Use of gold for both electrodes leads to switchable WORM (Write Once Read Many times) resistive devices. Use of aluminium for both electrodes increases the richness of behaviour allowing both curved and triangular memristive switching resistance memories. A comparison device with an aluminium bottom electrode and gold top electrode only exhibited significant memristive resistance switching when the aluminium electrode was the cathode, suggesting that the electrode is acting as a source/sink of oxygen anions. When the gold electrode was the cathode this electrode was deformed by oxygen evolution. These results demonstrate that aluminium is helpful for stabilising and promoting memristive behaviour in sol-gel TiO2 devices and that changing electrodes from aluminium to gold creates fundamentally different device characteristics.
@article{arxiv.1106.6293,
title = {The effect of changing electrode metal on solution-processed flexible titanium dioxide memristors},
author = {Ella Gale and David Pearson and Stephen Kitson and Andrew Adamatzky and Ben de Lacy Costello},
journal= {arXiv preprint arXiv:1106.6293},
year = {2013}
}