Related papers: Room temperature two terminal tunnel magnetoresist…
The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized…
Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in large non-local magnetoresistance. The magnitude of the…
We report the observation of current-induced spin polarization, the Rashba-Edelstein effect (REE), and its Onsager reciprocal phenomenon, the spin galvanic effect (SGE), in a few-layer graphene/2H-TaS2 heterostructure at room temperature.…
A recently reported transition in the electrical resistance of different natural graphite samples suggests the existence of superconductivity at room temperature. To check whether dissipationless electrical currents are responsible for the…
We have investigated the spin current polarization without the external magnetic field in the resonant tunneling diode with the emitter and quantum well layers made from the ferromagnetic GaMnN. For this purpose we have applied the…
We study the room-temperature electrical control of charge and spin transport in high-quality bilayer graphene, fully encapsulated with hBN and contacted via 1D spin injectors. We show that spin transport in this device architecture is…
We present a theoretical study on the spin-dependent transport through a spin valve consisting of graphene sandwiched between two magnetic leads with an arbitrary orientation of the lead magnetization. No gate voltage is applied. Using…
Electrical generation and detection of pure spin currents without the need of magnetic materials are key elements for the realization of full electrically controlled spintronic devices. In this framework, achieving a large spin-to-charge…
We demonstrate spin injection into a graphene thin film with high reliability by using non-local magnetoresistance (MR) measurements, in which the electric current path is completely separated from the spin current path. Using these…
A large magnetoresistance effect is obtained at room-temperature by using p-i-n armchair-graphene-nanoribbon (GNR) heterostructures. The key advantage is the virtual elimination of thermal currents due to the presence of band gaps in the…
It is usually assumed that tunneling current is fairly independent of temperature. By performing an atomistic transport simulation, we show, to the contrary, that the subthreshold tunneling current in a graphene nanoribbon (GNR)…
Temperature and field dependent measurements of the electrical resistance of different natural graphite samples, suggest the existence of superconductivity at room temperature in some regions of the samples. To verify whether…
We propose three-terminal spin devices with graphene nanoribbons (terminals) and a graphene flake (channel) to generate a highly spin-polarized current without an external magnetic field or ferromagnetic electrodes. The Hubbard repulsion…
The Hanle-type spin precession method was carried out associated with non-local magnetoresistance measurement using a highly doped (5\times10^19) silicon channel. The spin diffusion length obtained by the Hanle-method is in good agreement…
We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge…
We report the successful fabrication of lateral organic spin valves with a channel length in the sub $100\,nm$ regime. The fabication process is based on in-situ shadow evaporation under UHV conditions and therefore yields clean and…
The demand for compact, high-speed and energy-saving circuitry urges higher efficiency of spintronic devices that can offer a viable alternative for the current electronics. The route towards this goal suggests implementing two-dimensional…
We have fabricated suspended few layer (1-3 layers) graphene nanoribbon field effect transistors from unzipped multiwall carbon nanotubes. Electrical transport measurements show that current-annealing effectively removes the impurities on…
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…
Spin transport in graphene carries the potential of a long spin diffusion length at room temperature. However, extrinsic relaxation processes limit the current experimental values to 1-2 um. We present Hanle spin precession measurements in…