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Nanowires (NWs) with their quasi-one-dimensionality often present different structural and opto-electronic properties than their thin-film counterparts. The thinner they are the larger these differences are, in particular in the…
We present a proof of concept for a spectrally selective near-infrared (NIR) and short-wavelength infrared (SWIR) photodetector based on nanopatterned multilayer graphene intercalated with FeCl$_3$ (NPMLG-FeCl$_3$), enabling large…
A photodiode with 0.55$\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in…
The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, we report on the growth of InAs/InP/GaAsSb core-dual-shell…
We analyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3s*d5 tight-binding treatment of the electronic structure. Comparison of the measured…
The demand for high-performance semiconductors in electronics and optoelectronics has prompted the expansion of low-dimensional materials research to ternary compounds. However, photodetectors based on 2D ternary materials usually suffer…
In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials…
In this paper several designs to maximize the absorption efficiency of superconducting-nanowire single-photon detectors are investigated. Using a simple optical cavity consisting of a gold mirror and a SiO2 layer, the absorption efficiency…
Superconducting nanowire single-photon detectors are an ideal match for integrated quantum photonic circuits due to their high detection efficiency for telecom wavelength photons. Quantum optical technology also requires single-photon…
The great possibilities for strain engineering in core/shell nanowires have been explored as an alternative route to tailor the properties of binary III-V semiconductors without changing their chemical composition. In particular, we…
Mid-infrared silicon photonics has recently emerged as a new technology for a wide range of applications such as optical communication, lidar, and bio-sensing. One key component enabling this technology is the mid-infrared optical modulator…
In recent years, self-assembled semiconductor nanowires have been successfully used as ultra-sensitive cantilevers in a number of unique scanning probe microscopy (SPM) settings. We describe the fabrication of ultra-low dissipation…
The rising complexity of cutting-edge cryogenic systems is currently imposing challenging technical constraints to the monitoring of ultra-cold temperatures through standard commercially available sensors. Among different alternative…
Supercontinuum generation (SCG) is an important nonlinear optical process enabling broadband light sources for many applications, for which silicon nitride(Si3N4) has emerged as a leading on-chip platform.To achieve suitable group velocity…
We propose the use of superconducting nanowires as both target and sensor for direct detection of sub-GeV dark matter. With excellent sensitivity to small energy deposits on electrons, and demonstrated low dark counts, such devices could be…
Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top…
We report a novel graded refractive index antireflection coating for III/V quadruple solar cells based on bottom-up grown tapered GaP nanowires. We have calculated the photocurrent density of an InGaP-GaAs-InGaAsP-InGaAs solar cell with a…
Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic…
Nanoscale optoelectronic components achieve functionality via spatial variation in electronic structure induced by composition, defects, and dopants. To dynamically change the local band alignment and influence defect states, a scanning…
Nanoparticle (NP) arrays of noble metals strongly absorb light in the visible to infrared wavelengths through resonant interactions between the incident electromagnetic field and the metal's free electron plasma. Such plasmonic interfaces…