Related papers: Extended-SWIR Photodetection in All-Group IV Core/…
We demonstrate waveguide-integrated superconducting nanowire single-photon detectors on thin-film lithium niobate (LN). Using a 250 um-long NbN superconducting nanowire lithographically defined on top of a 125 um-long LN nanowaveguide,…
CMOS-compatible short- and mid-wave infrared emitters are highly coveted for the monolithic integration of silicon-based photonic and electronic integrated circuits to serve a myriad of applications in sensing and communications. In this…
Wide bandgap semiconductor heterostructures based on nanowires have attracted great interest as one of the nanoscale building blocks for the development of novel optoelectronic devices. Owing to the critical role of heterogeneities and…
Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements…
Recent advances in nanowire synthesis have enabled the realization of crystal phases that in bulk are attainable only under extreme conditions, i.e. high temperature and/or high pressure. For group IV semiconductors this means access to…
Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier mobility remains a challenge in materials science. Here, we…
We investigate the relaxation dynamics of photogenerated carriers in silicon nanowires consisting of a crystalline core and a surrounding amorphous shell, using femtosecond time-resolved differential reflectivity and transmission…
$\rm{Ge}_{1-x-y}Si_{x}Sn_{y}$ alloys were grown on Ge buffer layers at ultra-low temperature using reactions of $\rm SnH_{4}$ and $\rm GeH_{3}Cl$ for the first time. The latter is a newly introduced CVD source designed for epitaxial…
Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibility for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip…
The efficiency of GaAs nanowire solar cells can be significantly improved without any new processing steps or material requirements. We report coupled optoelectronic simulations of a GaAs nanowire (NW) solar cell with vertical p-i-n…
The short-wave infrared (SWIR) is an underexploited portion of the electromagnetic spectrum in metasurface-based nanophotonics despite its strategic importance in sensing and imaging applications. This is mainly attributed to the lack of…
We report a high Responsivity broad band photo-detector working in the wavelength range 400 nm to 1100 nm in a horizontal array of Si microlines (line width ~1 micron) fabricated on a Silicon-on-Insulator (SOI) wafer. The array was made…
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence,…
Using a hydrodynamic approach we examine bulk- and surface-induced second and third harmonic generation from semiconductor nanowire gratings having a resonant nonlinearity in the absorption region. We demonstrate resonant, broadband and…
We investigated the electronic properties of strained Si/Ge core-shell nanowires along the [110] direction using first principles calculations based on density-functional theory. The diameter of the studied core-shell wire is up to 5 nm. We…
Photoconductors based on semiconducting thin films, nanowires and 2-dimensional atomic layers have been extensively investigated. But there is no explicit photogain equation that allows for fitting and designing photoresponses of these…
The interest in nanowire photodetectors stems from their potential to improve the performance of a variety of devices, including solar cells, cameras, sensors, and communication systems. Implementing devices based on nanowire ensembles…
Using Time Independent Density Functional Theory (TIDFT) it is shown that the 2nd order optical susceptibilities of narrow (1nm-2nm) Silicon Nanowires (SiNW) are enhanced due to surface termination. The value of $\chi^{(2)}$ is enhanced up…
We report an investigation on the observation of ultrahigh photoresponse (photogain, G_Pc>106) in single nanowire photodetectors of diameter < 100 nm. The investigation which is a combination of experimental observations and a theoretical…
We review principles and trends in the use of semiconductor nanowires (NWs) as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as…