We report a novel graded refractive index antireflection coating for III/V quadruple solar cells based on bottom-up grown tapered GaP nanowires. We have calculated the photocurrent density of an InGaP-GaAs-InGaAsP-InGaAs solar cell with a MgF2/ZnS double layer antireflection coating and with a graded refractive index coating. The photocurrent density can be increased by 5.9 % when the solar cell is coated with a graded refractive index layer with a thickness of 1\mu m. We propose to realize such a graded refractive index layer by growing tapered GaP nanowires on III/V solar cells. For a first demonstration of the feasibility of the growth of tapered nanowires on III/V solar cells, we have grown tapered GaP nanowires on AlInP/GaAs substrates. We show experimentally that the reflection from the nanowire coated substrate is reduced and that the transmission into the substrate is increased for a broad spectral and angular range.
@article{arxiv.1210.6601,
title = {Broadband and omnidirectional anti-reflection layer for III/V multi-junction solar cells},
author = {Silke L. Diedenhofen and Grzegorz Grzela and Erik Haverkamp and Gerard Bauhuis and John Schermer and Jaime Gómez Rivas},
journal= {arXiv preprint arXiv:1210.6601},
year = {2012}
}