Related papers: Modeling of Graphene Oxide Memory based on Hybridi…
The geometrical and performance scaling of silicon CMOS integrated circuit technology over the past 50 years has enabled many affordable new products for business and consumer applications. Recognizing that Flash is approaching its ultimate…
We studied the electronic and the structural properties of amino acids (alanine, glycine, and histidine) attached to graphene oxide (GO) by peptide bonding, via plane wave pseudopotential total-energy calculations within the local spin…
The limited bandwidth of optical wireless communication (OWC) front-end devices motivates the use of multiple-input-multiple-output (MIMO) techniques to enhance data rates. It is known that very high multiplexing gains could be achieved by…
The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's…
We present a combined experimental and theoretical study of memory effects in vibration-induced compaction of granular materials. In particular, the response of the system to an abrupt change in shaking intensity is measured. At short times…
Magnetism is a prototypical phenomenon of quantum collective state, and has found ubiquitous applications in semiconductor technologies such as dynamic random access memory (DRAM). In conventional materials, it typically arises from the…
In this work, we develop reduced order models (ROMs) to predict solutions to a multiscale kinetic transport equation with a diffusion limit under the parametric setting. When the underlying scattering effect is not sufficiently strong, the…
Ferrimagnet (FiM), (FeCo)1-xGdx, attracts research attention due to its ultrafast magnetic dynamics and finite net magnetization. Incorporating FiM into the magnetic tunnel junction will be beneficial to further improve the writing speed of…
In this paper we propose and evaluate the performance of a 3D-embedded neuromorphic computation block based on indium gallium zinc oxide ($\alpha$-IGZO) based nanosheet transistor and bi-layer resistive memory devices. We have fabricated…
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…
Although ferroelectric systems inherently exhibit binary switching behavior, recent advances in analog memory device have spurred growing interest in achieving continuous memory states. In this work, we demonstrate ferroelectric amplitude…
Complementary resistive switches (CRS) are considered as a potential solution for the sneak path problem in large-scale integration of passive crossbar resistive memory arrays. A typical CRS is composed of two bipolar memory cells that are…
Transformers trained on modular arithmetic exhibit sharp transitions between memorization, generalization, and collapse. We show that weight decay acts as a scalar empirical control parameter for these regimes, and introduce two cheap…
The attention mechanism has been proven effective on various visual tasks in recent years. In the semantic segmentation task, the attention mechanism is applied in various methods, including the case of both Convolution Neural Networks…
This article is withdrawn since it is published in a journal We report on the first reduction methodology, compatible with flexible, temperature sensitive substrates, for the production of reduced spin coated graphene oxide (GO) electrodes.…
Sensing is an integral part of 6G and beyond systems, providing exceptional environmental perception along with communication. Radio frequency (RF)-based sensing often relies on simplified geometric assumptions (e.g., point scatterers or…
Neural implicit representations have recently demonstrated compelling results on dense Simultaneous Localization And Mapping (SLAM) but suffer from the accumulation of errors in camera tracking and distortion in the reconstruction.…
We study local electronic properties of graphene oxide (GO) and reduced graphene oxide (RGO) on metallic (Pt) and insulating (Si3N4) substrates in controlled humidity environment. We demonstrate that the supporting substrate plays a crucial…
Future multi-functional hybrid devices might combine switchable molecules and 2D material-based devices. Spin-crossover compounds are of particular interest in this context since they exhibit bistability and memory effects at room…
Transformers, while revolutionary, face challenges due to their demanding computational cost and large data movement. To address this, we propose HyFlexPIM, a novel mixed-signal processing-in-memory (PIM) accelerator for inference that…