Related papers: Modeling of Graphene Oxide Memory based on Hybridi…

We report combined scanning probe microscopy and electrical measurements to investigate local electronic transport in reduced graphene oxide (rGO) devices. We demonstrate that quantum transport in these materials can be significantly tuned…

The Adaptive Stabilized Finite Element method (AS-FEM) developed in Calo et. al. combines the idea of the residual minimization method with the inf-sup stability offered by the discontinuous Galerkin (dG) frameworks. As a result, the…

This research explores the characteristics of two CMOS-compatible RRAM cells utilizing silicon nitride as the switching material. By employing SET/RESET pulse sequences, the study successfully attains four distinct and stable resistance…

We report on resistive switching (RS) characteristics of W/WO3-x/Pt-based thin film memristors modulated by precisely controlled oxygen non-stoichiometry. RS properties of the devices with varied oxygen vacancy (VO) concentration have been…

Reduced graphene oxide (rGO) is a bulk-processable quasi-amorphous 2D material with broad spectral coverage and fast electronic response. rGO sheets are suspended in a polymer matrix and sequentially photoreduced while measuring the…

The reliable deployment of deep reinforcement learning in real-world settings requires the ability to generalize across a variety of conditions, including both in-distribution scenarios seen during training as well as novel…

A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltages is of significant interest, as it ensures compatibility…

Band structure determines the motion of electrons in a solid, giving rise to exotic phenomena when properly engineered. Drawing an analogy between electrons and photons, artificially designed optical lattices indicate the possibility of a…

Proper-orthogonal decomposition (POD) based reduced-order models (ROM) of structurally dominant fluid flow can support a wide range of engineering applications. Yet, although they perform well for unsteady laminar flows, their…

Hydration properties of graphene oxide (GO) are essential for most of its potential applications. In this work, we employ atomistic molecular dynamics simulations to investigate seven GO compositions with different levels of oxygenation.…

For neuromorphic engineering to emulate the human brain, improving memory density with low power consumption is an indispensable but challenging goal. In this regard, emerging RRAMs have attracted considerable interest for their unique…

Magnetic tunnel junction (MTJ)-based magnetic random-access memory (MRAM) is a promising platform for neuromorphic and in-memory computing owing to its non-volatility, high endurance, fast switching dynamics and CMOS compatibility. However,…

Redox-based memristive devices are among the alternatives for the next generation of non volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing devices. It is nowadays well established that the…

We introduce Graph Memory (GM), a structured non-parametric framework that represents an embedding space through a compact graph of reliability-annotated prototype regions. GM encodes local geometry and regional ambiguity through prototype…

The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall…

In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we…

Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlO$_{x}$-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/f$^{\gamma}$…

Mixture-of-Experts (MoE) layers activate a subset of model weights, dubbed experts, to improve model performance. MoE is particularly promising for deployment on process-in-memory (PIM) architectures, because PIM can naturally fit experts…

Computational modelling of two- and three-oscillator schemes with thermally coupled $VO_2$-switches is used to demonstrate a novel method of pattern storage and recognition in an impulse oscillator neural network (ONN) based on the…

Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory…