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The electromagnetically induced transparency (EIT) phenomenon in earlier universe is considered. We evaluated the elementary processes of the single scattering of photon on the hydrogen atom with the purpose of their use in the tasks of the…
We show that the statistical properties of a Coulomb crystal can be measured by means of a standard interferometric procedure performed on the spin of one ion in the chain. The ion spin, constituted by two internal levels of the ion,…
We report the construction and performance of a low temperature, high field scanning tunneling microscope (STM) operating down to 350mK and in magnetic fields up to 9T, with thin film deposition and in-situ cleaving capabilities. The main…
Scanning transmission electron microscopy (STEM) has advanced rapidly in the last decade thanks to the ability to correct the major aberrations of the probe forming lens. Now atomic-sized beams are routine, even at accelerating voltages as…
In this paper we explore the application of cryogenic imaging spectrophotometers. Prototypes of this new class of detector, such as superconducting tunnel junctions (STJs) and transition edge sensors (TESs), currently deliver low resolution…
The detection of fluorescence with submolecular resolution enables the exploration of spatially varying photon yields and vibronic properties at the single-molecule level. By placing individual polycyclic aromatic hydrocarbon molecules into…
We present the first thermoelectric measurements on pentacene field effect transistors. We report high values of the Seebeck coefficient at room temperature between 240 and 500 micro V/K depending on the dielectric surface treatment. These…
We demonstrate spin injection into a graphene thin film with high reliability by using non-local magnetoresistance (MR) measurements, in which the electric current path is completely separated from the spin current path. Using these…
Studies of atomic systems in electric fields are challenging because of the diverging perturbation series. However, physically meaningful Stark shifts and ionization rates can be found by analytical continuation of the series using…
The Photon Drag Effect (PDE) is a nonlinear process akin to optical rectification in which the momentum of light is transferred to charged carriers and converted to a DC voltage. Here, we experimentally demonstrate the spin-polarized…
Intense electromagnetic fields can result in dramatic changes in the electronic properties of solids. These changes are commonly studied using optical probes of the modified electronic structure. Here we use optical-scanning tunneling…
Spontaneously emitted photons are entangled with the electronic and nuclear degrees of freedom of the emitting atom, so interference and measurement of these photons can entangle separate matter-based quantum systems as a resource for…
Studying the electrical signals generated by living cells is key to understanding numerous biological phenomena. Electrochromic optical recording (ECORE) uses the electrochromism exhibited by certain materials to noninvasively measure these…
We theoretically study the subband structure of single Si $\delta$-doped GaAs inserted in a quantum well and subject to an electric field applied along the growth direction. We use an efficient self-consistent procedure to solve…
The electron reflection amplitude $R$ at stacking-fault (SF) induced fractional steps is determined for Ag(111) surface states using a low temperature scanning tunneling microscope. Unexpectedly, $R$ remains as high as $0.6 \sim 0.8$ as…
Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical methods to compute donor wave functions is dependent on…
We study the linear cosmological evolution of inelastic self-interacting dark matter in a two-component dark sector with a small mass splitting, assuming thermal initial conditions for the two species. We derive the coupled background and…
We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional…
The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio…
A spin-1 transverse Ising model with longitudinal crystal field in a longitudinal magnetic field is examined by introducing an effective field approximation (IEFT) which includes the correlations between different spins that emerge when…