Related papers: A 0.4 V, 19 pW Subthreshold Voltage Reference Gene…
MiniCACTUS-v2 is a monolithic sensor prototype designed in LF 150 nm CMOS process for time tagging of individual Minimum Ionizing Particles with an accuracy better than 100 ps. The sensing element is a deep n-well/p-substrate diode without…
Next-generation (5G/6G) wireless systems demand low-power mm-wave phased-array ICs. Variable-gain LNAs (VGLNAs) are key building blocks enabling hardware complexity reduction, performance enhancement and functionality extension. This paper…
A key challenge with large battery systems is heterogeneous currents and temperatures in modules with parallel-connected cells. Although extreme currents and temperatures are detrimental to the performance and lifetime of battery cells,…
The Transition Edge Sensor is extremely sensitive to the change of temperature, combined with the high-Z metal of a certain thickness, it can realize the high energy resolution measurement of particles such as X-rays. X-rays with energies…
In this article, we proposed a Variable threshold MOSFET(VTMOS)approach which is realized from Dynamic Threshold MOSFET(DTMOS), suitable for sub-threshold digital circuit operation. Basically the principle of sub- threshold logics is…
With increasing penetration of renewable energy and active consumers, control and management of power distribution networks has become challenging. Renewable energy sources can cause random voltage fluctuations as their output power depends…
A low cost PC based real time data logging system can be used in the laboratories for the measurement, monitoring and storage of the data for slowly varying signals in science and engineering stream. This can be designed and interfaced to…
This paper presents development and characterization of a 3.2 Gb/s serial link transmitter for CMOS image sensors. The transmitter incorporates Reed-Solomon code to achieve low error rate in the harsh environment of subatomic physics…
A novel method for extracting threshold voltage and substrate effect parameters of MOSFETs with constant current bias at all levels of inversion is presented. This generalized constant-current (GCC) method exploits the charge-based model of…
For the Low Emittance Gun (LEG) project at Paul Scherrer Institute a stable and reliable high voltage pulsed generator was needed in order to study low emittance beams generation and transport. The system had to provide variable asymmetric…
While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a top-gated (TG) configuration is implemented. The energy…
Sensor selection is critical for state estimation, control and monitoring of nonlinear processes. However, evaluating the performance of each possible combination of $m$ out of $n$ sensors is impractical unless $m$ and $n$ are small. In…
We present an automated protocol for tuning single-electron transistors (SETs) and single-hole transistors (SHTs) to operate as high-sensitivity DC charge sensors. The protocol initializes a previously unmeasured device after cooldown,…
The development of room-temperature sensing devices for detecting small concentrations of molecular species is imperative for a wide range of low-power sensor applications. We demonstrate a room-temperature, highly sensitive, selective, and…
We report a systematic study on the effect of sintering temperature on the structural and superconducting properties of nominal SmO0.8F0.2FeAs fabricated by simple one-step solid state reaction method. A detailed correlation between the…
Low power oriented circuit optimization consists in selecting the best alternative between gate sizing, buffer insertion and logic structure transformation, for satisfying a delay constraint at minimum area cost. In this paper we used a…
Inverter Based Generators (IBGs) have been increasing significantly in power systems. Due to the demanding thermal rating of Power Electronics (PE), their contribution to the system Short Circuit Current (SCC) is much less than that from…
Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…
The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate…
Silicon photonic devices fundamental to high-density wavelength-division multiplexed (DWDM) optical links and photonic switching networks, such as resonant modulators and Mach-Zehnder interferometers (MZIs), are highly sensitive to…