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This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson's equation including bandgap widening, intrinsic…
Integrated circuits (ICs) that can operate at high temperature have a wide variety of applications in the fields of automotive, aerospace, space exploration, and deep-well drilling. Conventional silicon-based complementary…
A single-electron inverter was fabricated that switches from a high output to a low output when a fraction of an electron is added to the input. For the proper operation of the inverter, the two single-electron transistors that make up the…
A MOSFET threshold voltage extraction method covering the entire range of drain-to-source voltage, from linear to saturation modes, is presented. Transconductance-to-current ratio is obtained from MOSFET transfer characteristics measured at…
We report on efforts to improve the speed of low-G far-infrared transition-edged-sensed bolometers. We use a fabrication process that does not require any dry etch steps to reduce heat capacity on the suspended device and measure a…
An ultra-low-voltage crystal quartz oscillator is proposed. The approach to its design is essentially based on using a HEMT operating in unsaturated dc regime and a quartz resonator as a resonant impedance transformer. The 25 MHz prototype…
The next generation of ultra-low-noise cryogenic detectors for space science applications require continued exploration of materials characteristics at low temperatures. The low noise and good energy sensitivity of current Transition Edge…
Cryogenic characterization and modeling of 0.18um CMOS technology (1.8V and 5V) are presented in this paper. Several PMOS and NMOS transistors with different width to length ratios(W/L) were extensively characterized under various bias…
We report the design-technology co-optimization (DTCO) scheme to develop a 28-nm cryogenic CMOS (Cryo-CMOS) technology for high-performance computing (HPC). The precise adjustment of halo implants manages to compensate the threshold voltage…
This paper presents a low-jitter hybrid voltage level shifter (HVLS) suitable for high-speed applications. The proposed architecture offers the advantage of cross-coupled feedback to simultaneously generate two voltage domain signals with…
This article proposes a method for generator controller tuning in a power system affected by stochastic loads. The method uses the Analysis of Variance to detect the controllers with significant effect over the quality of the system…
One of the major barriers that CMOS devices face at nanometer scale is increasing parameter variation due to manufacturing imperfections. Process variations severely inhibit the reliable operation of circuits, as the operational frequency…
Transistor is a three terminal semiconductor device normally used as an amplifier or as a switch. Here the alternating current (a.c) rectifying property of the transistor is considered. The ordinary silicon diode exhibits a voltage drop of…
Systematic errors in qubit state preparation arise due to non-idealities in the qubit control lines such as impedance mismatch. Using a data-based methodology of short-open-load calibration at a temperature of 30 mK, we report calibrated…
We demonstrate a 36$\times$36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The…
This work introduces a thermoreflectance-based system designed to measure the surface temperature field of activated microelectronic devices at submicron spatial resolution with either a laser or a CCD camera. The article describes the…
This paper present high precision halfwave rectifier circuit in dual phase output mode by 0.5 micrometer CMOS technology, plus or minus 1.5 V low voltage, it has received input signal and sent output current signal, respond in high…
In recent years, the progress on low temperature detector technologies has allowed design of large scale experiments aiming at pushing down the sensitivity on the neutrino mass below 1\,eV. Even with outstanding performances in both energy…
Stochastic Computing (SC) is an unconventional computing paradigm processing data in the form of random bit-streams. The accuracy and energy efficiency of SC systems highly depend on the stochastic number generator (SNG) unit that converts…
Inter-terminal capacitances (ITCs) have major influence on the dynamic performance of power SiC MOSFETs. Knowledge of the exact values for the ITCs is required in order to perform accurate and predictive compact model simulations of their…