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van der Waals (vdW) epitaxy is conventionally regarded as a rotation-free and strain-free growth mode driven by weak, isotropic interactions, yet many interfaces paradoxically exhibit strictly locked orientations that defy standard…
Epitaxial growth of topological insulator Bi2Se3 thin films on nominally flat and vicinal Si(111) substrates is studied. In order to achieve planner growth front and better quality epifilms, a two-step growth method is adopted for the van…
Broadening the variety of two-dimensional (2D) materials and improving the synthesis of ultrathin films are crucial to the development of the semiconductor industry. As a state-of-the-art 2D material, Ga2Se2 has attractive optoelectronic…
Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling bond-free surface is by essence an ideal template layer for van der Waals heteroepitaxy of two-dimensional materials such as silicene. However,…
Non-conventional epitaxial techniques, such as van der Waals epitaxy (vdWE) and remote epitaxy, have attracted substantial attention in the semiconductor research community for their capability to repeatedly produce high-quality…
Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures in wafer scale with an…
We report on the low-temperature fabrication (300$\deg$C) of ultrathin 2D amorphous carbon layers on III-V semiconductors by plasma-enhanced chemical vapor deposition as a universal template for remote epitaxy. We present growth and…
Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power…
Unlike conventional epitaxy, van der Waals epitaxy (vdWE) allows nearly stress-free growth of thick films with highly oriented crystals without dislocations even for large film-substrate lattice mismatches. Despite reports of vdWE in…
Selective epitaxy on 2D-material masks is a promising pathway for achieving localized, defect-suppressed GaN growth, but conventional 2D transfer processes limit scalability and interface control. Here, we demonstrate a thru-hole epitaxy…
Three-dimensional epitaxial heterostructures are based on covalently-bonded interfaces, whereas those from 2-dimensional (2D) materials exhibit van der Waals interactions. Under the right conditions, however, material structures with mixed…
We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is…
Strain solitons are quasi-dislocations that form in van der Waals materials to relieve the energy associated with lattice or rotational mismatch in the crystal. Novel and unusual electronic properties of strain solitons have been both…
Scalable fabrication of magnetic 2D materials and heterostructures constitutes a crucial step for scaling down current spintronic devices and the development of novel spintronic applications. Here, we report on van der Waals (vdW) epitaxy…
As the focus of applied research in topological insulators (TI) evolves, the need to synthesize large-area TI films for practical device applications takes center stage. However, constructing scalable and adaptable processes for…
Realizing van der Waals (vdW) epitaxy in the 80s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW…
Epitaxial growth of WTe$_2$ offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thicknesses. However,the mean island size of WTe$_2$ grown by…
We demonstrate selective area epitaxy of GaAs films using patterned graphene masks on a Ge (001) substrate. The GaAs selectively grows on exposed regions of the Ge substrate, for graphene spacings as large as 10 microns. The selectivity is…
We report on the direct observation of interface superconductivity in single-unit-cell SnSe2 films grown on graphitized SiC(0001) substrate by means of van der Waals epitaxy. Tunneling spectrum in the superconducting state reveals rather…
It is shown that chiral plasmons, characterized by a longitudinal magnetic moment accompanying the longitudinal charge plasmon, lead to electromagnetic near-fields that are also chiral. For twisted bilayer graphene, we estimate that the…