Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to harvest epitaxial layers using practical processes. Here, we demonstrate a method to grow and harvest multiple epitaxial membranes with extremely high throughput at the wafer scale. For this, 2D materials are directly formed on III-N and III-V substrates in epitaxy systems, which enables an advanced remote epitaxy scheme comprised of multiple alternating layers of 2D materials and epitaxial layers that can be formed by a single epitaxy run. Each epilayer in the multi-stack structure is then harvested by layer-by-layer peeling, producing multiple freestanding membranes with unprecedented throughput from a single wafer. Because 2D materials allow peeling at the interface without damaging the epilayer or the substrate, wafers can be reused for subsequent membrane production. Therefore, this work represents a meaningful step toward high-throughput and low-cost production of single-crystal membranes that can be heterointegrated.
@article{arxiv.2204.08002,
title = {Multiplication of freestanding semiconductor membranes from a single wafer by advanced remote epitaxy},
author = {Hyunseok Kim and Yunpeng Liu and Kuangye Lu and Celesta S. Chang and Kuan Qiao and Ki Seok Kim and Bo-In Park and Junseok Jeong and Menglin Zhu and Jun Min Suh and Yongmin Baek and You Jin Ji and Sungsu Kang and Sangho Lee and Ne Myo Han and Chansoo Kim and Chanyeol Choi and Xinyuan Zhang and Haozhe Wang and Lingping Kong and Jungwon Park and Kyusang Lee and Geun Young Yeom and Sungkyu Kim and Jinwoo Hwang and Jing Kong and Sang-Hoon Bae and Wei Kong and Jeehwan Kim},
journal= {arXiv preprint arXiv:2204.08002},
year = {2022}
}