Related papers: Electron mobility in n-doped zinc sulphide
A study of the mobility of n-doped wurtzite III-Nitrides is reported. We have determined the nonequilibrium thermodynamic state of the III-Nitrides systems, driven far away from equilibrium by a strong electric field, in the steady state,…
Aluminum nitride is a promising ultra-wide band gap semiconductor for optoelectronics and power electronics. However, its practical applications have been limited by challenges with doping and achieving high electrical conductivity. Recent…
Seeking a better understanding of the electron transport in n-doped zinc blende GaN and wurtzite AlN, it was performed here a theoretical study resorting to Non Equilibrium Statistical Operator Method, which provides a set of coupled…
The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary…
Dislocation motion--the atomic-scale mechanism of crystal plasticity--governs the strength and ductility of materials. In functional materials, external stimuli beyond mechanical stress can also affect dislocation glide. In the wide band…
In this paper, the reported experimental data in [Sci. Rep., 2012, 2, 533] related to electrical transport properties in bulk ZnO, ZnMgO/ZnO, and ZnMgO/ZnO/ZnMgO single and double heterostructures were analyzed quantitatively and the most…
We present a combined treatment of the non-equilibrium dynamics and transport of electrons and phonons by carrying out \textit{ab initio} calculations of the fully coupled electron and phonon Boltzmann transport equations. We find that the…
A theoretical investigation of the excess energy dissipation of highly excited photoinjected electrons in both wurtzite and zincblende GaN is presented. The calculations are performed by solving numerically coupled quantum transport…
The calculated electron mobility for a graphene nanoribbon as a function of applied electric field has been found to have a large threshold field for entering a nonlinear transport regime. This field depends on the lattice temperature,…
Mobility is a key parameter for SnO2, which is extensively studied as a practical transparent oxide n-type semiconductor. In experiments, the mobility of electrons in bulk SnO2 single crystals varies from 70 to 260 cm2V-1s-1 at room…
Electric fields commonly exist in semiconductor structures of electronics, bringing to bear on phonon thermal transport. Also, it is a popular method to tune thermal transport in solids. In this work, phonon and thermal transport properties…
We have measured the specific heat of zincblende ZnS for several isotopic compositions and over a broad temperature range (3 to 1100 K). We have compared these results with calculations based on ab initio electronic band structures,…
Electronic and thermoelectric transport in zigzag monolayer WSe$_2$ nanoribbons are studied under monochromatic irradiation. The electronic structure is described within a six-orbital tight-binding framework constructed from the relevant…
Electrons in monolayer graphene in the presence of an electromagnetic (or electric) wave are considered theoretically. It is shown that the electron motion is a nonlinear combination of Zitterbewegung (ZB, trembling motion) resulting from…
We present a detailed ab-initio study of semi-classical transport in n-ZnSe using Rode's iterative method. Inclusion of ionized impurity, piezoelectric, acoustic deformation and polar optical phonon scattering and their relative importance…
We study the role of electron-electron interactions for spin polarized transport using the Boltzmann equation and derive a set of coupled transport equations. For spin polarized transport the electron-electron interactions are important,…
Spin-polarized photoemission from wurtzite and zinc-blende gallium nitride (GaN) photocathodes has been observed and measured for the first time. The p-doped GaN photocathodes were epitaxially grown and activated to negative electron…
The competition between kinetic energy and Coulomb interactions in electronic systems can lead to complex many-body ground states with competing superconducting, charge density wave, and magnetic orders. Here we study the low temperature…
We study electron-phonon interaction and related transport properties of nodal-line semimetal ZrSiS using first-principles calculations. We find that ZrSiS is characterized by a weak electron-phonon coupling on the order of 0.1, which is…
We propose and study theoretically a new mechanism of electron-impurity scattering in doped seminconductors with large dielectric constant. It is based upon the idea of \textit{vector} character of deformations caused in the crystalline…