Mobility in N-Doped Wurtzite III-Nitrides
Abstract
A study of the mobility of n-doped wurtzite III-Nitrides is reported. We have determined the nonequilibrium thermodynamic state of the III-Nitrides systems, driven far away from equilibrium by a strong electric field, in the steady state, which follows after a very fast transient. The dependence of the mobility (which depends on the nonequilibrium thermodynamic state of the sample) on the electric field strength is derived, which decreases with the strength of electric field. We analyzed the contributions to the mobility arising out of the different channels of electron scattering, namely, the polar optic, deformation, piezoelectric, interactions with the phonons, and with impurities. The case of n-InN, n-GaN, and n-AlN have been analyzed: as expected the main contribution comes from the polar-optic interactions in these strongly polar semiconductors. The other interactions are in decreasing order, the deformation acoustic, the piezoelectric, and the one due to impurities.
Keywords
Cite
@article{arxiv.2110.01609,
title = {Mobility in N-Doped Wurtzite III-Nitrides},
author = {Clóves Gonçalves Rodrigues and Valder N. Freire and Áurea R. Vasconcellos and Roberto Luzzi},
journal= {arXiv preprint arXiv:2110.01609},
year = {2021}
}
Comments
arXiv admin note: substantial text overlap with arXiv:2110.00847