Related papers: Optical bistable SOI micro-ring resonators for mem…
Optical static random access memory (O-SRAM) is one of the key components required for achieving the goal of ultra-fast, general-purpose optical computing. We propose and design a novel O-SRAM using fabrication-friendly photonics device…
Stochastic oscillators based on emerging nanodevices are attractive because of their ultra-low power requirement and ability to exhibit stochastic resonance, a phenomenon where synchronization to weak input signals is enabled due to ambient…
The oscillatory response of nonlinear systems exhibits characteristic phenomena such as multistability, discontinuous jumps and hysteresis. These can be utilized in applications leading, e.g., to precise frequency measurement, mixing,…
Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In…
Physics-inspired computing paradigms, such as Ising machines, are emerging as promising hardware alternatives to traditional von Neumann architectures for tackling computationally intensive combinatorial optimization problems (COPs). While…
Ensembles of bismuth donor spins in silicon are promising storage elements for microwave quantum memories due to their long coherence times which exceed seconds. Operating an efficient quantum memory requires achieving critical coupling…
We demonstrate robust power- and wavelength-dependent optical bistability in fully suspended monolayers of WSe2 near the exciton resonance. Bistability has been achieved under continuous-wave optical excitation at an intensity level of 10^3…
We demonstrate voltage-tunable thermo-optic bi- and tri-stability in silicon photonic microring resonators with lateral p-i-n junctions and present a technique for characterizing the thermo-optic transient response of integrated optical…
Spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization through utilizing an electric field. Electrically tunable SOI through electrostatic gates have been investigated, however, the relatively weak and…
An increasing interest in molecular structures whose long term dynamics resemble those of bistable mechanical systems promotes the search of possible candidates that may operate as two-state switching units. Of particular interest are the…
Photonic implementations of reservoir computing (RC) promise to reach ultra-high bandwidth of operation with moderate training efforts. Several optoelectronic demonstrations reported state of the art performances for hard tasks as speech…
Combining scanning electron microscopy (SEM) and electron-beam-induced current (EBIC) imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially…
We report the observation of transient nonlinear optical effects in a macroscopic whispering gallery mode resonator made of rutile TiO$_2$, demonstrating strong optical-microwave transduction under laser irradiation. By comparing the…
We have designed a Micro-Ring Resonator (MRR) based device that allows for the post-selection of high order NOON states via heralding. NOON states higher than $N=2$ cannot be generated deterministically. By tuning the coupling parameters of…
Modulating retroreflectors (MRRs) offer a promising pathway to low-complexity and energy efficient asymmetric optical inter-satellite link (OISL) for small spacecrafts, such as CubeSats. In this paper, we develop a unified statistical…
Wireless power transfer via a dielectric loaded multi-moded split cavity resonator (SCR) is proposed. Unlike conventional inductive resonant coupling, the scheme enables the control of both the real and imaginary parts of the transfer…
We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below…
A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…
Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…
Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 10 nm. The resistive switching behaviour of transition metal oxides and the associated memristor device is emerging…