Valley-selective exciton bistability in a suspended monolayer semiconductor

Hongchao Xie; Shengwei Jiang; Jie Shan; Kin Fai Mak

doi:10.1021/acs.nanolett.8b00987

Valley-selective exciton bistability in a suspended monolayer semiconductor

Mesoscale and Nanoscale Physics 2018-05-23 v1

Authors: Hongchao Xie , Shengwei Jiang , Jie Shan , Kin Fai Mak

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Abstract

We demonstrate robust power- and wavelength-dependent optical bistability in fully suspended monolayers of WSe2 near the exciton resonance. Bistability has been achieved under continuous-wave optical excitation at an intensity level of 10^3 W/cm^2. The observed bistability is originated from a photo-thermal mechanism, which provides both optical nonlinearity and passive feedback, two essential elements for optical bistability. Under a finite magnetic field, the exciton bistability becomes helicity dependent, which enables repeatable switching of light purely by its polarization.

Keywords

optical bistability suspended monolayer wse2 exciton resonance photo-thermal mechanism valley selectivity helicity-dependent switching

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@article{arxiv.1803.04067,
  title  = {Valley-selective exciton bistability in a suspended monolayer semiconductor},
  author = {Hongchao Xie and Shengwei Jiang and Jie Shan and Kin Fai Mak},
  journal= {arXiv preprint arXiv:1803.04067},
  year   = {2018}
}

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14 pages, 6 figures

Valley-selective exciton bistability in a suspended monolayer semiconductor

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