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High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Lande g-factor provide a promising platform for next-generation applications in the field of high-speed electronics, spintronics, and…
Lattice-matched heterovalent alloys and superlattices have some unique physical properties. For example, their band gap can change by a large amount without significant change in their lattice constants, thus they have great potential for…
Light-emitting diodes (LEDs) can bridge the gap between narrow linewidth, expensive lasers and broadband, inefficient thermal globars for low-cost chemical sensing in the mid-infrared (mid-IR). However, the efficiency of III-V based mid-IR…
III V semiconductor nanowire based photodetectors have significant potential for remote sensing and LiDAR applications, particularly due to their ability to operate at 1.55 {\mu}m. Achieving room temperature operation and near unity…
Comprehensive investigations on ZnSe/GaAs and GaAs/ZnSe interfaces were carried out by photoluminescence (PL) and transmission electron microscopy (TEM), as a part of realizing high quality ZnSe-GaAs (100) hetero-valent structures (HS). The…
Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a…
In semiconductor superlattices, when Bragg oscillating electrons interact with an input electromagnetic field, frequency multiplication is possible. An ideal superlattice has a purely antisymmetric voltage current response and can thus…
In this article, a brief introduction is first given on infrared studies of materials at high pressures using a diamond anvil cell. Then, our recent results of high-pressure infrared studies are described for Mg$_2$Si, InAs, and InSb. For…
We investigate the existence and the dispersion characteristics of surface waves that propagate at an interface between metal-dielectric superlattice and isotropic dielectric. Within the long wavelength limit, when the effective-medium…
Controlling the strain level in nanowire heterostructures is critical for obtaining coherent interfaces of high crystalline quality and for the setting of functional properties such as photon emission, carrier mobility or piezoelectricity.…
BAs is III-V semiconductor with ultra-high thermal conductivity, but many of its electronic properties are unknown. This work applies predictive atomistic calculations to investigate the properties of BAs heterostructures, such as strain…
Understanding the interfaces of layered nanostructures is key to optimizing their structural and magnetic properties for the desired functionality. In the present work, the two interfaces of a few nm thick Fe layer in Ag-57Fe-Ag trilayers…
Conventional optical elements are bulky and limited to specific functionalities, contradicting the increasing demand of miniaturization and multi-functionalities. Optical metasurfaces enable tailoring light-matter interaction at will,…
This letter presents a numerical investigation of acoustic modes propagating in an LiNbO$_3$/sapphire substrate under a periodic Al grating, demonstrating the occurrence of longitudinal leaky SAWs (LLSAWs) with a unique combination of very…
Nonlinear interferometers with correlated photons hold a promise to advance optical characterization and metrology techniques by improving their performance and affordability. Nonlinear interferometers offer the sub-shot noise phase…
We demonstrate the transfer of the superconducting properties of NbTi---a large-gap high-critical-field superconductor---into an InAs heterostructure via a thin intermediate layer of epitaxial Al. Two device geometries, a Josephson junction…
Surface lattice resonances (SLRs) in metasurfaces have become a transformative platform for subwavelength optical devices, leveraging their high quality (Q)-factors, pronounced local field enhancement, and extensive long-range interactions.…
Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In this regard, semiconductor membranes emerged as a versatile…
Topological superconductivity can be engineered in semiconductors with strong spin-orbit interaction coupled to a superconductor. Experimental advances in this field have often been triggered by the development of new hybrid material…
Heterostructures involving graphene and bismuth, with their ability to absorb light over a very wide energy range, are of interest for engineering next-generation opto-electronics. Critical to the technological application of such…