Related papers: Interface quality in GaSb/AlSb short period superl…
Semiconductor-superconductor hybrid systems have outstanding potential for emerging high-performance nanoelectronics and quantum devices. However, critical to their successful application is the fabrication of high-quality and reproducible…
PbSe and related IV-VI rocksalt-structure semiconductors have important electronic properties that may be controlled by epitaxial strain and interfaces, thus harnessed in an emerging class of IV-VI/III-V heterostructures. The synthesis of…
We report on the growth of axial InAs-on-GaAs nanowire heterostructures on silicon by molecular beam epitaxy using 20 nm diameter Au catalysts. First, the growth parameters of the GaAs nanowire segment were optimized to achieve a pure…
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance.…
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is…
Traditionally, advancements in semiconductor devices have been driven by lattice-matched heterojunctions with tailored band alignments through heteroepitaxy techniques. However, there is significant interest in expanding the capabilities of…
We present subwavelength resonant lattices fashioned as nano- and microstructured films as a basis for a host of device concepts. Whereas the canonical physical properties are fully embodied in a one-dimensional periodic lattice, the final…
We theoretically study the propagation of sound waves in GaAs/AlAs superlattices focussing on periodic modes in the vicinity of the band gaps. Based on analytical and numerical calculations, we show that these modes are the product of a…
The growing demand for more efficient data transmission has made nanoscale high-throughput all-optical switching a critical requirement in modern telecommunication systems. Metasurface-based platforms offer unique advantages because of…
We present an innovative method to enhance Long Period Optical Fiber Gratings (LPGs) for refractive index sensing using microsphere-assisted superlens laser nanostructuring. This technique involves self-assembling a silica microsphere…
We have used an eight band model to investigate the electronic structures and to calculate the optical matrix elements of InAs-GaSb broken gap semiconductor heterostructures. The unusual hybridization of the conduction band states in InAs…
Hyperbolic materials are natural or engineered artificial structures that provide means to manipulate and control electromagnetic radiation, leading to a variety of strong light-matter interactions at the nanoscale. In this work, we explore…
We demonstrate theoretically the coexistence of Dirac semimetal and topological insulator phases in InSb/$\alpha$-Sn conventional semiconductor superlattices, based on advanced first-principles calculations combined with low-energy $k\cdot…
Ordered atomic-scale superlattices on surface hold great interest both for basic science and for potential applications in advanced technology. However, controlled fabrication of superlattices down to atomic scale has proven exceptionally…
The electronic transport properties of graphene-based superlattice structures are investigated. A graphene-based modulation-doped superlattice structure geometry is proposed and consist of periodically arranged alternate layers:…
Following the success of p-Ge hot-hole lasers, there is also potential for using other semiconductor materials, notably III-V's such as GaAs and InSb. Previous analysis had suggested that a large effective mass ratio between the heavy and…
Friction dissipates a substantial portion of global energy, motivating the pursuit of superlubricity, a state of near-zero friction, in real-world systems. Conventional approaches rely on crystalline lattice mismatch to suppress periodic…
Infrared imaging is indispensable for its ability to penetrate obscurants and visualize thermal signatures, yet its practical use is hindered by the intrinsic limitations of conventional detectors. Nonlinear upconversion, which converts…
Topological interface states in one-dimensional superlattices provide spatially localized phonon modes protected by the topology of the underlying band structure. In GaAs/AlAs distributed Bragg reflectors (DBRs), such states can be…
Indium antimonide (InSb) is a fundamental material for infrared radiation detectors based on interband transitions. Its narrow bandgap enables detection of infrared radiation within the $3-5 \mu m$ atmospheric window, while its high quantum…