Related papers: Induced superconducting pairing in integer quantum…
The inverted band structure discovered in InAs/GaSb quantum well (QW) is found to host the topological quantum spin Hall (QSH) states. A QSH insulator hosts counterpropagating spin-polarized edge states that are protected by the…
InAs/GaSb heterostructure is one of the systems where quantum spin Hall effect is predicted to arise. However, as confirmed by recent experimental studies, the most significant highlight of the effect i.e., the conductance quantization due…
Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a sample in the inverted regime where electrons and holes…
We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic…
The Andreev reflection (AR) in 2D HgTe/CdTe quantum well-superconductor hybrid systems is studied. A quantized AR with AR coefficient equal to one is predicted, which is due to the multi-Andreev reflection near the interface of the hybrid…
The recent development of superconducting spintronics has revealed the spin-triplet superconducting proximity effect from a spin-singlet superconductor into a spin-polarized normal metal. In addition recently superconducting junctions using…
The superconducting proximity effect has been the focus of significant research efforts over many years and has recently attracted renewed interest as the basis of topologically non-trivial states in materials with a large spin orbit…
We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double quantum well with band inversion. We demonstrate, that…
We consider the proximity effect between a singlet s-wave superconductor and the edge of a Quantum Spin Hall (QSH) topological insulator. We establish that Andreev reflection at a QSH edge state/superconductor interface is perfect while…
The field of topological insulators (TIs) is rapidly growing. Concerning possible applications, the search for materials with an easily controllable TI phase is a key issue. The quantum spin Hall effect, characterized by a single pair of…
The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T'-WTe$_2$ and is characterized by a band gap in the two-dimensional (2D) interior and helical one-dimensional (1D) edge…
Integration of high quality semiconductor-superconductor devices into scalable and CMOS compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs…
Hybrid superconductor/semiconductor devices constitute a powerful platform where intriguing topological properties can be investigated. Here we present fabrication methods and analysis of Josephson junctions formed by a high-mobility InAs…
Quantum wells in InAs/GaSb heterostructures can be tuned to a topological regime associated with the quantum spin Hall effect, which arises due to an inverted band gap and hybridized electron and hole states. Here, we investigate…
Heterostructures between two-dimensional quantum spin Hall insulators (QSHI) and superconducting materials can allow for the presence of Majorana Fermions at their conducting edge states. Although a strong interface hybridization helps…
Ge/SiGe quantum well heterostructures confining a high-mobility two-dimensional hole gas (2DHG) have emerged as a compelling platform for hybrid superconductor(S)-semiconductor(Sm) quantum devices. Here, we investigate the low-temperature…
Recent experiments have shown that the edge states of a quantum Hall sample can be coupled to a superconductor, so that incoming electrons in the edge states can be Andreev converted by the superconductor as coherent superpositions of an…
We present our recent electronic transport results in top-gated InAs/GaSb quantum well hybrid structures with superconducting Ta electrodes. We show that the transport across the InAs-Ta junction depends largely on the interfacial…
Parallel one-dimensional semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely e.g. on Andreev processes or topological effects. In order to realize…
We consider a fractional quantum Hall bilayer system with an interface between quantum Hall states of filling fractions $(\nu_{\text{top}},\nu_{\text{bottom}})=(1,1)$ and $(1/3,2)$, motivated by a recent approach to engineering artificial…