Related papers: Non-Hysteretic Condition in Negative Capacitance J…

Back-end-of-line (BEOL) logic integration is emerging as a complementary scaling path to supplement front-end-of-line (FEOL) Silicon. Among various options for BEOL logic, Carbon Nanotube Field-Effect Transistors (CNFETs) have been…

The magnetic properties of the two-dimensional $J_{1}-J_{2}$ model with both exchanges $J_{1}$ and $J_{2}$ being antiferromagnetic and a single-ion anisotropy at nonzero temperature are investigated. As $J_{2}/J_{1}<1/2$ ($>1/2$), only the…

This paper investigates voltage stability in inverter-based power systems concerning fold and saddle-node bifurcations. An analytical expression is derived for the sensitivity of the stability margin using the normal vector to the…

The effect of nonmagnetic impurities on the phase diagram of the classical Heisenberg antiferromagnet on a triangular lattice is investigated. We present analytical arguments confirmed by numerical calculations that at zero temperature…

We provide a new criterion based on graph duality to predict whether the 3-state Potts antiferromagnet on a plane quadrangulation has a zero- or finite-temperature critical point, and its universality class. The former case occurs for…

We investigate the gate voltage dependence of capacitance of a system gate - 2D electron gas (C-Vg). The abrupt drop of capacitance at decreasing concentration was found. The possible reasons of this drop, namely inhomogeneity of electron…

We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent…

We have measured the relaxation time of a thermally unstable ferromagnetic nanoparticle incorporated into a magnetic tunnel junction (MTJ) as a function of applied magnetic field, voltage V (-0.38 V < V < +0.26 V), and temperatures (283 K<…

High Electron Mobility Transistors (HEMTs) are most suitable for harsh environments as they operate reliably under extreme conditions such as high voltages, high temperatures, radiation exposure and corrosive atmospheres. In this article,…

Superconducting diodes, characterized by nonreciprocal supercurrent transport, offer transformative opportunities for ultra-low-power circuits. However, achieving reliable operation at temperatures above liquid nitrogen remains a major…

This paper presents the design and benchmarking of cryogenic bulk-FETs using an experimentally calibrated TCAD framework that integrates 2-D electrostatics and interface-trap effects from $T = 2$ K to 300 K. For a 28-nm node device, carrier…

Josephson junction field-effect transistors (JJFETs) have recently re-emerged as promising candidates for superconducting computing. For JJFETs to perform Boolean logic operations, the so-called gain factor $\alpha_{R}$ must be larger than…

We have developed a computer model for the simulation of resistive superconducting fault current limiters in three dimensions. The program calculates the electromagnetic and thermal response of a superconductor to a time-dependent overload…

Hf and Zr nitrides are promising compounds for many technologically important areas, including high temperature structural applications, quantum computing and solar/optical applications. This article reports on a comprehensive…

In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…

Current-voltage characteristics were measured in the mixed state of Y1Ba2Cu3O(7-delta) superconducting films in the regime where flux flow becomes unstable and the differential conductivity dj/dE becomes negative. Under conditions where its…

We present resistivity measurements of the upper critical field (H$_{c2}$) phase diagram as a function of temperature (T) for Nd$_{1.85}$Ce$_{0.15}$CuO$_{4+\delta}$/SrTiO$_3$ single crystal films with different degree of disorder ($\delta$)…

A series of recent experiments on the Nernst effect, upper critical field $H_{c2}$ and enhanced diamagnetic magnetization $M$ by Wang et al (PRB 73, 024510), were interpreted as to provide evidence for the pseudogap scenario which…

Semiconductor $p^+ - p^- - n - p^+ - n^{++}$ structures with large junction and contact areas are treated as 1 \times 2-dimensional active media, in which self-organized pattern formation can be expected. The local bistable behavior of the…

The transient negative capacitance (NC) of solid ferroelectric materials used in field effect transistors can reduce the power dissipation of electronics. Here we show that similar negative capacitance appears in the recently discovered…