Related papers: Non-Hysteretic Condition in Negative Capacitance J…
Understanding the origin of hysteresis in the channel resistance from top gated graphene transistors is important for transistor applications. Capacitance - voltage measurements across the gate oxide on top gated bilayer graphene show…
Graphene nanostructures exhibit an intrinsic advantage in relation to the gate delay in three-terminal devices and provide additional benefits when operate in the quantum capacitance limit. In this paper, we developed a simple model that…
In this report, the hysteresis behaviors of PEI:LiClO4 and PEG:LiClO4 electrolyte gate and back gate Graphene-on-SiO2 FET were analyzed by gate-voltage source-drain current modulation. It is shown that both the sweeping rate and the sweep…
Hysteresis and commonly observed p-doping of graphene based field effect transistors (FET) was already discussed in reports over last few years. However, the interpretation of experimental works differs; and the mechanism behind the…
We study how maximum output power can be obtained from a thermoelectric generator(TEG) with nonideal heat exchangers. We demonstrate with an analytic approach based on a force-flux formalism that the sole improvement of the intrinsic…
In this study, we explore the corrected thermodynamics of non-linear magnetic charged anti-de Sitter (AdS) black holes surrounded by quintessence, incorporating thermal fluctuations and deriving the corrected thermodynamic potentials. We…
Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical…
Thermal hysteresis in a micron-size Superconducting Quantum Interference Device ($\mu$-SQUID), with weak links as Josephson junctions, is an obstacle for improving its performance for magnetometery. Following the "hot-spot" model of Skocpol…
Stability of standing flux-antiflux front in anisotropic layered superconductors is considered. We describe two assisting mechanisms destabilizing the standing vortex-antivortex front. There are anisotropy of the layered superconductors and…
The thermoelectric properties of the surface states in three-dimensional topological insulator nanowires are studied. The Seebeck coefficients $S_c$ and the dimensionless thermoelectrical figure of merit $ZT$ are obtained by using the…
We perform computer simulations to probe the magnetic hysteresis in a two-dimensional ($L^{}_x\times L^{}_y$) assembly of magnetic nanoparticles as a function of dipolar interaction strength $h^{}_d$, temperature $T$, aspect ratio…
Based on the two-flavor NJL model with Tsallis non-extensive statistics, this work explores the QCD phase structure and thermodynamic properties under strong magnetic fields and chiral imbalance. The Tsallis parameter $q$ captures…
We consider the analytic solution of the zero temperature hysteresis in the random field Ising model on a Bethe lattice of coordination number $z$, and study how it approaches the mean field solution in the limit z-> \infty. New analytical…
A study of QCD at non-zero chemical potential, mu, and temperature, T, is performed using the lattice technique. The transition temperature (between the confined and deconfined phases) is determined as a function of mu and is found to be in…
We present a recently introduced strategy to study non-perturbatively thermal QCD up to temperatures of the order of the electro-weak scale, combining step scaling techniques and shifted boundary conditions. The former allow to renormalize…
Inter-terminal capacitances (ITCs) have major influence on the dynamic performance of power SiC MOSFETs. Knowledge of the exact values for the ITCs is required in order to perform accurate and predictive compact model simulations of their…
The flapping flag instability occurs when a flexible cantilevered plate is immersed in a uniform airflow. To this day, the nonlinear aspects of this aeroelastic instability are largely unknown. In particular, experiments in the literature…
Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate…
Theoretically, the helical edge states of two-dimensional topological insulators are protected from coherent backscattering due to nonmagnetic disorder provided electron interactions are not too strong. Experimentally, the edges typically…
We consider a two-parameter family of cylindrical force-free equilibria, modeled to match numerical simulations of relativistic force-free jets. We study the linear stability of these equilibria, assuming a rigid impenetrable wall at the…