Related papers: 1D photonic crystal direct bandgap GeSn-on-insulat…
A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the traditional III-V integration approach. We demonstrated…
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be…
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase…
GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant progress, the study of the electrically injected lasers has just…
The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many reports focused on optically pumped lasers, GeSn lasers…
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the…
Efficient, low threshold, and compact semiconductor laser sources are being investigated for many applications in high-speed communications, information processing, and optical interconnects. The best edge-emitting and vertical cavity…
GeSn alloys offer a promising route towards a CMOS compatible light source and the realization of electronic-photonic integrated circuits. One tactic to improve the lasing performance of GeSn lasers is to use a high Sn content, which…
Photonic crystals allow unprecedented control over how light is confined, propagates, and interacts with matter. Their development has had a transformative impact on optics and physics, and they remain the central platform for both…
GeSn alloys are promising candidates for complementary metal-oxide-semiconductor (CMOS)-compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has recently shown promise in improving the lasing performance.…
Semiconductor nanowires have shown great potential for enabling ultra-compact lasers for integrated photonics platforms. Despite the impressive progress in developing nanowire lasers, their integration into Si photonics platforms remains…
Owing to its true direct bandgap and tunable bandgap energies,GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. Demonstrations of optically pumped GeSn laser at room under…
Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology, tunable band structure, and potential for a direct bandgap…
The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to…
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through…
CMOS-compatible short- and mid-wave infrared emitters are highly coveted for the monolithic integration of silicon-based photonic and electronic integrated circuits to serve a myriad of applications in sensing and communications. In this…
The enhanced nonlinear optical response of a one-dimensional (1D) photonic crystal (PC) made from polymers and graphene composites is observed. The graphene PC was fabricated by spin-coating. It shows obvious bandgaps at two wavelengths in…
Ge-Sn alloys with a sufficiently high concentration of Sn is a direct bandgap group IV material. Recently, ion implantation followed by pulsed laser melting has been shown to be a promising method to realize this material due to its high…
Light sources with ultra-low energy consumption and high performance are required to realize optical interconnects for on-chip communication. Photonic crystal (PhC) nanocavity lasers are one of the most promising candidates to fill this…
Interest in photonic crystal nanocavities is fueled by advances in device performance, particularly in the development of low-threshold laser sources. Effective electrical control of high performance photonic crystal lasers has thus far…