Related papers: Semiconductor Epitaxy in Superconducting Templates
We apply the superconducting proximity effect in TiN/Ti multi-layer films to tune the critical temperature, Tc, to within 10 mK with high uniformity (less than 15 mK spread) across a 75 mm wafer. Reproducible Tc's are obtained from 0.8 -…
The interplay between substrates and superconducting thin films has attracted increasing attention. Here, we report an in-depth investigation on superconducting properties of the epitaxial TiN thin films grown on three different substrates…
When a topological insulator is made into a nanowire, the interplay between topology and size quantization gives rise to peculiar one-dimensional states whose energy dispersion can be manipulated by external fields. In the presence of…
We theoretically consider the proximity effect in semiconductor-superconductor hybrid nanostructures, which are being extensively studied in the context of the ongoing search for non-Abelian Majorana fermions in solid state systems.…
Here, we demonstrate an approach that provides a precise control of the dimension of InAs from one-dimensional nanowires to wafer-scale free-standing two-dimensional nanosheets, which have a high degree of crystallinity and outstanding…
Tin telluride is a narrow gap semiconductor with promising properties for IR optical applications and topological insulators. We report a convenient colloidal synthesis of quasi-two-dimensional SnTe nanocrystals through the hot-injection…
High-quality free-standing InAs nanosheets are emerging layered semiconductor materials with potentials in designing planar Josephson junction devices for novel physics studies due to their unique properties including strong spin-orbit…
We report the superconducting properties of tantalum nitride (TaN) nanowires and TaN/copper (TaN/Cu) bilayer nanowires fabricated on 300 mm silicon wafers using CMOS-compatible processes. We evaluate how an integrated Cu heatsink modifies…
Thin films of disordered superconductors such as titanium nitride (TiN) exhibit large kinetic inductance (KI), high critical temperature, and large quality factors at the single-photon level. KI nonlinearity can be exploited as an…
Superinductors are circuit elements characterised by an intrinsic impedance in excess of the superconducting resistance quantum ($R_\text{Q}\approx6.45~$k$\Omega$), with applications from metrology and sensing to quantum computing. However,…
Integrated photonic devices made of silicon nitride (SiN), which can be integrated with silicon-on-insulator and III-V platforms, are expected to drive the expansion of silicon photonics technology. However, the relatively low refractive…
Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to the helical spin-polarization of these surface states, the proximity…
We report on the observation on proximity-induced superconductivity in the topological insulator BiSbTeSe2 coupled to a disordered superconductor, amorphous indium oxide (a-InO). Resistance temperature measurements reveal superconducting…
The rapid progress in 2D material research has triggered the growth of various quantum nanostructures-nanosheets, nanowires, nanoribbons, nanocrystals and the exotic nature originating through 2D heterostructures has extended the synthesis…
Topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk bandgap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that Group V-VI…
The prospect of coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental problems in mesoscopic superconductivity, scalable superconducting…
Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully…
Despite growing interest in them, highly crystalline two-dimensional superconductors derived from exfoliated layered materials are few. Employing the anisotropic Migdal-Eliashberg formalism based on {\it ab initio} calculations, we find…
InN nanowires were grown on Si<111> and Si<100> substrates by plasma-assisted molecular beam epitaxy using a thin AlN buffer layer at temperatures compatible with the thermal budget limitation imposed by Back-End-Of-Line processing.…
Superconducting quantum devices provide excellent connectivity and controllability while semiconductor spin qubits stand out with their long-lasting quantum coherence, fast control, and potential for miniaturization and scaling. In the last…