Related papers: Reducing strain in heterogeneous quantum devices u…
The non-homogeneity in the critical temperature $T_{c}$ of an Microwave Kinetic Inductance Detector (MKID) could be caused by non-uniformity in the deposition process of the thin superconducting film. This produces low percent yield and…
We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition (ALD). Both, magnitude and bandwidth of…
A major challenge in using spins in the solid state for quantum technologies is protecting them from sources of decoherence. This can be addressed, to varying degrees, by improving material purity or isotopic composition for example, or…
Conformal Atomic Layer Deposition (ALD) of nanoparticles is an now an established nanofabrication concept employed by many researchers for applications such as creating diffusion barriers, tuning catalysis, or masking a toxic particle core…
Two-dimensional materials (2DMs) have been widely investigated because of their potential for heterogeneous integration with modern electronics. However, several major challenges remain, such as the deposition of high-quality dielectrics on…
Nanoscale tailoring of the optoelectronic response of 2D Transition Metal Dichalcogenides semiconductor layers (TMDs) has been achieved thanks to a novel strain engineering approach based on the grayscale thermal-Scanning Probe Lithography…
Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect tolerant InAs quantum…
The use of Standard Reference Materials (SRM) from the National Institute of Standards and Technology (NIST) for quantitative analysis of chemical composition using Synchrotron based X-Ray Florescence (SR-XRF) and Scanning Transmission…
Manipulating materials with atomic-scale precision is essential for the development of next-generation material design toolbox. Tremendous efforts have been made to advance the compositional, structural, and spatial accuracy of material…
We demonstrate aluminum-on-silicon planar transmon qubits with time-averaged ${T_1}$ energy relaxation times of up to ${270\,\mu s}$, corresponding to Q = 5 million, and a highest observed value of ${501\,\mu s}$. We use materials analysis…
Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in…
Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-quality, ultrathin high-\k{appa} dielectrics that fully meet…
In this paper we demonstrated the thermal Atomic Layer Deposition (ALD) growth at 250 {\deg}C of highly homogeneous and ultra-thin ($\approx$ 3.6 nm) $Al_2O_3$ films with excellent insulating properties directly onto a monolayer (1L)…
Tritium permeation into and through materials poses a critical challenge for the development of nuclear fusion reactors. Minimizing tritium permeation is essential for the safe and efficient use of available fuel supplies. In this work, we…
Superconducting qubits have arisen as a leading technology platform for quantum computing which is on the verge of revolutionizing the world's calculation capacities. Nonetheless, the fabrication of computationally reliable qubit circuits…
Several active areas of research in novel energy storage technologies, including three-dimensional solid state batteries and passivation coatings for reactive battery electrode components, require conformal solid state electrolytes. We…
Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid solubility limits of chalcogen elements in silicon, these materials were previously…
We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). We demonstrate the feasibility of direct ALD growth with…
We demonstrate a gate dielectric engineering approach leveraging an ultrathin, atomic layer deposited (ALD) silicon oxide interfacial layer (SiL) between the amorphous oxide semiconductor (AOS) channel and the high-k gate dielectric. SiL…
Silver is a metal which provides the highest reflectivity in the very broad wavelength range as well as the lowest polarization splitting. However, it is not very stable chemically and silver mirrors are easily damaged in a corrosive or…