Related papers: Reducing strain in heterogeneous quantum devices u…
Strain engineering has emerged as a powerful tool to modify the optical and electronic properties of two-dimensional crystals. Here we perform a systematic study of strained semiconducting transition metal dichalcogenides. The effect of…
Amorphization of silicon is crucial to applications in photonics, microelectronics and solar cell technologies. Ultrafast lasers have been used to generate amorphous silicon from crystalline silicon using rapid nonthermal melting and…
Noise and decoherence due to spurious two-level systems (TLS) located at material interfaces is a long-standing issue in solid state quantum technologies. Efforts to mitigate the effects of TLS have been hampered by a lack of surface…
Electron spins are amongst the most coherent solid-state systems known, however, to be used in devices for quantum sensing and information processing applications, they must be typically placed near interfaces. Understanding and mitigating…
We report on the fabrication and characterization of 50 Ohms, flux-tunable, low-loss, SQUID-based transmission lines. The fabrication process relies on the deposition of a thin dielectric layer (few tens of nanometers) via Atomic Layer…
Compressed Deep Learning (DL) models are essential for deployment in resource-constrained environments. But their performance often lags behind their large-scale counterparts. To bridge this gap, we propose Alignment Adapter (AlAd): a…
Currently, Sb$_2$Se$_3$ thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further device improvement is the open circuit voltage, which is the…
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a…
To integrate plasmonic devices into industry, it is essential to develop scalable and CMOS compatible plasmonic materials. In this work, we report high plasmonic quality titanium nitride (TiN) on c-plane sapphire by plasma enhanced atomic…
The self-assembly of submonolayer amounts of Au on the densely stepped Si(553) surface creates an array of closely spaced \atomic wires" separated by 1.5 nm. At low temperature, charge transfer between the terraces and the row of silicon…
Black body materials prove promising candidates to meet future energy demands as they are able to harvest energy from the total bandwidth of solar radiation. Here, we report on high absorption (> 98 %) near-black body-like structures…
We present a method for relieving aluminum 3D transmon qubits from a silicon substrate using micromachining. Our technique is a high yield, one-step deep reactive ion etch that requires no additional fabrication processes, and results in…
In our previous publication, we discussed the optical properties of multi-layered nanocomposite samples consisting of 300 pairs of an AlOx layer and a Cu layer produced from sputtering atomic layer augmented deposition (SALAD). These…
Thin film of silicon is an interesting material for many technological applications in electronic industry and in energy harvesting technologies, but requires a method for controlled growth of thin films. The purpose of this study is to…
Rydberg alkaline earth atoms are promising tools for quantum simulation and metrology. When one of the two valence electrons is promoted to long-lived circular states, the second valence electron can be optically manipulated without…
During electrostatic bonding, also known as anodic bonding, silicon is bonded to glass by applying an external voltage and simultaneous heating to temperatures of 200...450 $\deg$C. While cooling to working temperature after bonding…
Strain is ubiquitous in solid-state materials, but despite its fundamental importance and technological relevance, leveraging externally applied strain to gain control over material properties is still in its infancy. In particular, strain…
We demonstrate enhanced relaxation and dephasing times of transmon qubits, up to ~ 60 \mu s by fabricating the interdigitated shunting capacitors using titanium nitride (TiN). Compared to lift-off aluminum deposited simultaneously with the…
The additive manufacture of compositionally graded Al/Cu parts by laser engineered net shaping (LENS) is demonstrated. The use of a blue light build laser enabled deposition on a Cu substrate. The thermal gradient and rapid solidification…
All spin logic device (ASLD) blazes an alternative path for realizing ultra-low power computing in the Post-Moore era. However, initial device structure relying on ferromagnetic input/output and spin transfer torque (STT) driven…