Related papers: Giant Piezospintronic Effect in a Noncollinear Ant…
Ferromagnetic pyrochlore and spinel materials with topological flat bands are of interest for their potential to exhibit a giant anomalous Hall effect (AHE). In this work, we present computational predictions of stability and electronic…
The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in…
We report on the functionalization of multiferroic BiFeO3 epitaxial films for spintronics. A first example is provided by the use of ultrathin layers of BiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 and Co…
We theoretically investigate the angular and spin dependent transport in normal-metal/helical-multiferroic/ferromagnetic heterojunctions. We find a tunneling anisotropic magnetoresistance (TAMR) effect due to the spiral magnetic order in…
Intensive studies have been made on antiferromagnets as candidate materials for next generation memory bits due to their ultrafast dynamics reaching picosecond time scales. Recent demonstrations of electrical bidirectional switching of…
Multiferroics have found renewed interest in topological magnetism and for logic-in-memory applications. Among them, SrMnO$_{3}$, possessing strong magnetoelectric coupling is gaining attention for the design of coexisting magnetic and…
The L1_2-phase non-collinear antiferromagnet (AFM) Mn_3Ir has emerged as a pioneering platform for realizing the zero-field anomalous Hall effect (AHE), thereby catalyzing rapid advances in antiferromagnetic spintronics. Despite its…
Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in (Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling and reflects the dependence of the tunneling density of states in a ferromagnetic layer on…
We investigate the suitability of nearly half-metallic ferrimagnetic quaternary Heusler alloys, CoCrMnZ (Z=Al, Ga, Si, Ge) to assess the feasibility as electrode materials of MgO-based magnetic tunnel junctions (MTJ). Low magnetic moments…
The anomalous Hall effect is investigated theoretically by means of density functional calculations for the non-collinear antiferromagnetic order of the hexagonal compounds Mn$_3$Ge and Mn$_3$Sn using various planar triangular magnetic…
Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions with a Ni counter electrode and an aluminium oxide barrier…
Antiferromagnetic spintronic devices have the potential to outperform conventional ferromagnetic devices due to their ultrafast dynamics and high data density. A challenge in designing these devices is the control and detection of the…
Altermagnetism has attracted considerable interest, yet its associated spintronic phenomena have so far been largely confined to electronic systems. In this work, we uncover a universal symmetry-based strategy for realizing topological…
While ferromagnets are at the heart of daily life applications, their large magnetization and resulting energy cost for switching bring into question their suitability for reliable low-power spintronic devices. Non-collinear…
We present a theoretical investigation of epitaxial strain effects on the magnetic fluctuation properties of Mn$_3$Sn noncollinear antiferromagnets. Employing density functional theory (DFT), we uncover significant strain-induced…
We report an experimental study of electron transport properties of MnSe/(Bi,Sb)2Te3 heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)2Te3 is a three-dimensional topological insulator (TI). Strong magnetic…
All-oxide magnetic tunnel junctions (MTJs) incorporating functional materials as insulating barriers have the potential of becoming the founding technology for novel multi-functional devices. We investigate, by first-principles density…
The combination of spin-orbit coupling driven effects and multiferroic tunneling properties was explored experimentally in thin Pt/Co/BTO/LSMO multilayers. The presence of a Pt heavy metal allows for the spin current-induced magnetization…
Materials exhibiting controllable magnetic phase transitions are currently in demand for many spintronics applications. Here we investigate from first principles the electronic structure and intrinsic anomalous Hall, spin Hall and anomalous…
We predict robust Ising ferromagnetism driven by Coulomb interaction in the metallic phase of twisted transition metal dichalcogenides homobilayers for a range of small twist angles. Due to the presence of spin-valley locking and Chern…