Related papers: Giant Piezospintronic Effect in a Noncollinear Ant…
The observation of perpendicular magnetic anisotropy (PMA) at MgO/Fe interfaces boosted the development of spintronic devices based on ultrathin ferromagnetic layers. Yet, magnetization reversal in the standard magnetic tunnel junctions…
By performing first-principles calculations, we systematically explore the effect of epitaxial strain on the structure and properties of multiferroic TbMnO3. We show that, although the unstrained bulk TbMnO3 displays a non-collinear…
Valley-related multiple Hall effect and piezoelectric response are novel transport characteristics in low-dimensional system, however few studies have reported their coexistence in a single system as well as their coupling relationships. By…
The issue of anomalous high magnetoresistance, beyond the Julli\`ere model, observed in nonmagnetic electrode-chiral molecular-ferromagnetic electrode devices has puzzled the community for a long time. Here, by considering the magnetic…
The intrinsic anomalous Hall conductivity (AHC) in a ferromagnetic metal is completely determined by its band structure. Since the spin orientation direction is an important band-structure tuning parameter, it is highly desirable to study…
The spin filtering effect, distinct decaying lengths experienced by oppositely spin-polarized electrons in a magnetic barrier, generally occurs in ferromagnetic (FM) insulators or semiconductors. With the rise of altermagnetic (ALM)…
In this work we investigate the effect of the mechanical stress on the performance of magnetic tunnel junctions (MTJ) with perpendicular magnetic anisotropy. We developed a 4-point bending setup, that allows us to apply a constant stress…
Antiferromagnetic Weyl semimetals with spin chirality offer excellent platforms to address the Berry phase physics, which manifests prominently in several of their electro-optical and electro-magnetic responses including as a large…
Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…
Spin-splitting antiferromagnets with spin-polarized band structures in momentum space have garnered intensive research attention due to their zero net magnetic moments, ultras fast spin dynamics as conventional antiferromagnets, and…
We theoretically investigate a nonlinear spin Hall effect in $\mathcal{PT}$-symmetric antiferromagnetic metals, which serve as an efficient spin current generator. We elucidate that an emergent spin-dependent Berry curvature dipole is a…
Superconductivity and magnetism are generally incompatible because of the opposing requirement on electron spin alignment. When combined, they produce a multitude of fascinating phenomena, including unconventional superconductivity and…
We investigate the spin Hall magnetoresistance in thin film bilayer heterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO. While rotating an external magnetic field in the easy plane of NiO, we record the…
We report the observation of negative nonlocal resistances in multiterminal mesoscopic gold Hall bar structures whose characteristic dimensions are larger than the electron mean-free path. Our results can only be partially explained by a…
Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge…
Multiferroic tunnel junctions (MFTJs), integrating ferroelectric and ferromagnetic functionalities within a single nanoscale device, hold significant promise for non-volatile, multi-state memory and innovative computing paradigms. In…
$\mathrm{MnBi_2Te_4}$ has recently been established as an intrinsic antiferromagnetic (AFM) topological insulator and predicted to be an ideal platform to realize quantum anomalous Hall (QAH) insulator and axion insulator states. We…
Emerging altermagnetic materials with vanishing net magnetizations and unique band structures have been envisioned as an ideal electrode to design antiferromagnetic tunnel junctions. Their momentum-resolved spin splitting in band structures…
We present the synthesis and study of the magnetic and electronic properties of NiFe2O4/{\gamma}-Al2O3/SrTiO3 heterostructure. The {\gamma}-Al2O3/SrTiO3 interface hosts a high-mobility two-dimensional electron gas (2DEG) with large…
Unconventional magnetic materials including non-collinear antiferromagnets, p-wave magnets and altermagnets, are an emerging frontier for quantum spintronics and hybrid quantum devices. Critical to the application of these materials is…