Related papers: INTPIX4NA -- new integration-type silicon-on-insul…

We present the results of the characterization of novel n-in-p planar pixel detectors, designed for the future upgrades of the ATLAS pixel system. N-in-p silicon devices are a promising candidate to replace the n-in-n sensors thanks to…

The High Luminosity LHC (HL-LHC) upgrade requires the planned Inner Tracker (ITk) of the ATLAS detector to tolerate extremely high radiation doses. Specifically, the innermost parts of the pixel system will have to withstand radiation…

We report on a recently developed novel type of large area (62 mm x 62 mm) position sensitive silicon detector with four-corner readout. It consists of a square-shaped ion-implanted resistive anode framed by additional low-resistivity…

CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher…

On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to…

The European X-ray Free Electron Laser (XFEL) will deliver 27000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single molecules and the…

Mid-infrared spectrum is a critical tool for chemical analysis, industrial inspection, environment, and other fields due to its rich chemical bond information. However, the complicated growth or fabrication procedures of existing…

The CMS tracker consists of two tracking systems utilizing semiconductor technology: the inner pixel and the outer strip detectors. The tracker detectors occupy the volume around the beam interaction region between 3 cm and 110 cm in radius…

The existing ATLAS Tracker will be at its functional limit for particle fluences of 10^15 neq/cm^2 (LHC). Thus for the upgrades at smaller radii like in the case of the planned Insertable B-Layer (IBL) and for increased LHC luminosities…

This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer…

The Topmetal-M is a large area pixel sensor (18 mm * 23 mm) prototype fabricated in a new 130 nm high-resistivity CMOS process in 2019. It contains 400 rows * 512 columns square pixels with the pitch of 40 {\mu}m. In Topmetal-M, a novel…

The high-luminosity upgrade of the CERN LHC requires the replacement of the CMS tracking detector to cope with the increased radiation fluence while maintaining its excellent performance. An extensive R\&D program, aiming at using 3D pixel…

We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology,…

In this paper, we study how pixel size influences energy resolution for a proposed pixelated detector---a high sensitivity, low cost, and real-time radon monitor based on \textit{Topmetal-${II}^-$} time projection chamber (TPC). Using…

XRPIX is the monolithic X-ray SOI (silicon-on-insulator) pixel detector, which has a time resolution better than 10 $\rm{\mu}$s as well as a high detection efficiency for X-rays above 10 keV. XRPIX is planned to be installed on future X-ray…

We report on the assessment of the imaging performance of CITIUS -- a high-speed X-ray detector developed for the large-scale synchrotron radiation facility SPring-8-II -- for heavy charged particles and neutrons. To characterize the…

We report measurements characterizing the performance of a kinetic inductance detector array designed for a wavelength of 25 microns and very low optical background level suitable for applications such as a far-infrared instrument on a…

We present a compact, noise-resilient reconstructive spectrometer-on-a-chip that achieves high-resolution hyperspectral imaging across an extended near-infrared (NIR) range up to 1100nm. The device integrates monolithically fabricated…

Using industrial standard 0.35{\mu}m CMOS Integrated Circuit process, we realized a highly pixelated sensor that directly collects charge via metal nodes placed on the top of each pixel and forms two dimensional images of charge cloud…

A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation…