Related papers: Towards GaAs Thin-Film Tracking Detectors
We apply the superconducting proximity effect in TiN/Ti multi-layer films to tune the critical temperature, Tc, to within 10 mK with high uniformity (less than 15 mK spread) across a 75 mm wafer. Reproducible Tc's are obtained from 0.8 -…
The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical…
Graphene has emerged as an ultrafast optoelectronic material for on-chip photodetector applications. The 2D nature of graphene enables its facile integration with complementary metal-oxide semiconductor (CMOS) microelectronics and silicon…
Conventional semiconductors such as silicon and InGaAs based photodetectors have encountered a bottleneck in modern electronics and photonics in terms of spectral coverage, low resolution, non-transparency, non-flexibility and…
Among the top priorities for high-energy astronomy in the coming decade are sensitive surveys in the hard X-ray/soft \gamma-ray (10-600 keV) and medium-energy \gamma-ray (0.2-80 MeV) bands. Historically, observations in the soft and medium…
The great possibilities for strain engineering in core/shell nanowires have been explored as an alternative route to tailor the properties of binary III-V semiconductors without changing their chemical composition. In particular, we…
Photodetectors based on nano-structured superconducting thin films are currently some of the most sensitive quantum sensors and are key enabling technologies in such broad areas as quantum information, quantum computation and…
This paper is the first report of n-type GaAs as a cryogenic scintillation radiation detector for the detection of electron recoils from interacting dark matter (DM) particles in the poorly explored MeV/c2 mass range. Seven GaAs samples…
The III-Se layered semiconductors, including InSe and GaSe, are promising optoelectronic materials due to their relatively high electron mobilities at room temperature, nonlinear optical responses, ferroelectricity, self-passivated van der…
The past ten years have seen the advent of silicon-based precise timing detectors for charged particle tracking. The underlying reason for this evolution is a design innovation: the Low-Gain Avalanche Diode (LGAD). In its simplicity, the…
Cost-effective mid-wave infrared (MWIR) optoelectronic devices are of utmost importance to a plethora of applications such as night vision, thermal sensing, autonomous vehicles, free-space communication, and spectroscopy. To this end,…
N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with…
The present generation of Micro-Pattern Gaseous Detectors (MPGDs) are radiation hard detectors, capable of detecting efficiently particle rates of several MHz/cm$^2$ , while exhibiting good spatial resolution ($\leq$ 50 $\mu$m) and modest…
Terahertz (THz) technologies have been of interest for many years due to the variety of applications including gas sensing, nonionizing imaging of biological systems, security and defense, etc. To date, scientists have used different…
The plasma panel sensor (PPS) is a gaseous micropattern radiation detector under current development. It has many operational and fabrication principles common to plasma display panels. It comprises a dense matrix of small, gas plasma…
Employing amorphous superconductors, such as Type-II molybdenum silicide (MoSi), instead of crystalline materials significantly simplifies the material deposition and scalable nanoscale prototyping, beneficial for quantum electronic and…
III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate…
n-Ga2O3/p-GaN heterojunction based photodetector devices are fabricated on Si-doped (-201) \beta-Ga2O3 epitaxial layers grown by pulsed laser deposition (PLD) technique on p-type c-GaN/sapphire templates. These devices demonstrate the…
Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence,…
Progress in superconducting device and detector technologies over the past decade have realized practical applications in quantum computers, detectors for far-infrared telescopes, and optical communications. Superconducting thin film…