Related papers: Ferroelectric Tunneling Junctions for Edge Computi…
This paper investigates and compares through a comprehensive TCAD analysis 2D and 3D simulations for ferroelectric based FETs. We provide clear evidence that the multiple read conductance values experimentally observed in FeFETs stem from…
Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes (FeDs) are two-terminal NVM devices exhibiting rectifying…
This article reviews recent advances in low-temperature electronic thermal transport properties of thermally biased superconductor heterostructures focusing on the two-terminal transport. Since the last decade, ferromagnetism has been…
We have realized submicron tunnel ferromagnetic Al/AlO$_x$/Al/Ni$_{80}$Fe$_{20}$/Al Josephson junctions (JJs) in Manhattan-style configuration for qubit applications. These junctions have been designed to lie within the energy range of…
Using a simple quantum-mechanical model, we explore a tunneling anisotropic magnetoresistance (TAMR) effect in ferroelectric tunnel junctions (FTJs) with a ferromagnetic electrode and a ferroelectric barrier layer, which spontaneous…
Arrays of Vortex Transitional (VT) memory cells with functional density up to $1 Mbit/cm^2$ have been designed, fabricated, and successfully demonstrated. This progress is due to recent advances in design optimization and in superconductor…
Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned reference layer and a composite free layer (FL) are investigated. Different thicknesses of the FL were tested to obtain an optimal balance between tunneling…
Memristors, memcapacitors, and meminductors, collectively called memelements, represent an innovative generation of circuit elements whose properties depend on the state and history of the system. The hysteretic behavior of one of their…
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular…
Electron transport through fully depleted ferroelectric tunnel barriers sandwiched between two metal electrodes and its dependence on ferroelectric polarization direction are investigated. The model assumes a polarization direction…
Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as…
The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torque based switching of an overlying ferromagnet (FM).…
Magneto-transport properties in hybrid magnetic tunnel junctions (MTJs) integrating self-assembled monolayers (SAMs) as tunnel barriers are critically influenced by spinterface effects, which arise from the electronic properties at…
Ternary content addressable memories (TCAMs) are useful for certain computing tasks since they allow us to compare a search query with a whole dataset stored in the memory array. They can also unlock unique advantages for cryogenic…
Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2D TFETs: electrical…
We investigate electronic thermal rectification in ferromagnetic insulator-based superconducting tunnel junctions. Ferromagnetic insulators coupled to superconductors are known to induce sizable spin splitting in the superconducting density…
In this paper, a theoretical approach, comprising the non-equilibrium Green's function method for electronic transport and Landau-Khalatnikov equation for electric polarization dynamics, is presented to describe polarization-dependent…
Antiferromagnetic spintronics exhibits ultra-high operational speed and stability in a magnetic field, holding promise for the realization of next-generation ultra-high-speed magnetic storage. However, theoretical exploration of the…
Ferromagnetic electrodes chemically bonded with thiol functionalized molecules can produce novel molecular spintronics devices. However, major challenges lie in developing Ferromagnetic electrodes based commercially viable device…
The tunneling electroresistance (TER) for ferroelectric tunnel junctions (FTJs) with BaTiO_{3} (BTO) and PbTiO}_{3} (PTO) barriers is calculated by combining the microscopic electronic structure of the barrier material with a macroscopic…