Related papers: Ferroelectric Tunneling Junctions for Edge Computi…
If a computer could be assembled from superconducting components, the energy efficiency would far surpass that of conventional electronics. Historic research efforts towards this goal yielded pivotal breakthroughs in the development and…
Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here we propose a fully magnetically…
We investigated the low temperature performance of CoFeB/MgO based perpendicular magnetic tunnel junctions (pMTJs) by characterizing their quasi-static switching voltage, high speed pulse write error rate and endurance down to 9 K. pMTJ…
In this paper I briefly overview recent theoretical and experimental advances in understanding of tunneling processes between normal metals and metals containing electrons which occupy partially filled f-orbitals. In heavy-fermion materials…
Ferroelectric hafnium zirconium oxide (HZO) thin films show significant promise for applications in ferroelectric random-access memory, ferroelectric field-effect transistors, and ferroelectric tunneling junctions. However, there are…
Due to the ever increasing power and cooling requirements of large-scale computing and data facilities, there is a worldwide search for low-power alternatives to CMOS. One approach under consideration is superconducting computing based on…
Josephson junctions made from aluminium and its oxide are the most commonly used functional elements for superconducting circuits and qubits. It is generally known that the disordered thin-film AlOx contains atomic tunneling systems.…
In a recent Letter [N.A. Pertsev and H. Kohlstedt, Phys. Rev. Lett. 98, 257603 (2007)] the authors claim that "even nanoscale capacitors and tunnel junctions may have out of plane polarization sufficient for memory applications." Here we…
In this work we give a characterization of the RF effect of memory switching on Nb-Al/AlOx-(Nb)-Pd$_{0.99}$Fe$_{0.01}$-Nb Josephson junctions as a function of magnetic field pulse amplitude and duration, alongside with an electrodynamical…
A high performance triple-heterojunction (3HJ) design has been previously proposed for tunneling FETs (TFETs). Compared with single heterojunction (HJ) TFETs, the 3HJ TFETs have both shorter tunneling distance and two transmission…
This paper addresses the question: Can spintronic circuits based on Magnetic Tunnel Junction (MTJ) transducers outperform their state-of-the-art CMOS counterparts? To this end, we use the EPFL combinational benchmark sets, synthesize them…
Transition metal oxides show fascinating physical properties such as high temperature superconductivity, ferro- and antiferromagnetism, ferroelectricity or even multiferroicity. The enormous progress in oxide thin film technology allows us…
Josephson junctions containing ferromagnetic materials exhibit interesting physics and show promise as circuit elements for superconducting logic and memory. For memory applications, the properties of the junction should be controllable by…
We report on the first integration of an antiferromagnetic Heusler compound acting as a pinning layer into magnetic tunneling junctions. The antiferromagnet Ru$_2$MnGe is used to pin the magnetization direction of a ferromagnetic Fe layer…
Superconducting Tunnel Junctions (STJ's) are currently being developed as photon detectors for a wide range of applications. Interest comes from their ability to cumulate photon counting with chromaticity (i.e. energy resolution) from the…
Many emerging alternative models of computation require massive numbers of random bits, but their generation at low energy is currently a challenge. The superparamagnetic tunnel junction, a spintronic device based on the same technology as…
This work presents an equivalent circuit model for Magnetic Tunnel Junctions (MTJs) that accurately captures their magnetization dynamics and electrical behavior. Implemented in LTspice, the model is validated against direct numerical…
Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy…
2D Ferroelectric materials are promising for designing low-dimensional memory devices. Here, we explore strain tunable ferroelectric properties of group-IV monochalcogenides MX (M=Ge, Sn; X=S, Se) and their potential application in lateral…
Josephson junction circuits, such as superconducting quantum interference devices (SQUIDs) and single-flux-quantum (SFQ) circuits, have been applied in both analog and digital systems for their ultralow-noise, high-speed, and…