Related papers: GaN HEMT based high energy particles detection pre…
We give a description of the design, construction and testing of the 30 and 44 GHz Front End Modules (FEMs) for the Low Frequency Instrument (LFI) of the Planck mission to be launched in 2009. The scientific requirements of the mission…
By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…
III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which have enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport…
Steep-slope $\beta$-Ga$_2$O$_3$ nano-membrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in gate dielectric stack. Subthreshold slope less than 60 mV/dec at room…
This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of…
Diamond is a promising material for high-power electronic applications in both the dc and rf domains. However, the predicted advantages are yet to be realized for a number of technical challenges. In particular, n-type devices have not been…
Semiconductor emitter can possibly achieve sharp cutoff wavelength due to its intrinsic bandgap absorption and almost zero sub-bandgap emission without doping. A germanium wafer based selective emitter with front-side antireflection and…
In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the gate edge towards the drain. The breakdown of such devices…
An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under optical stimulus. The 2DEG-IDT photodetector exhibits a…
We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double heterostructure FETs exhibit a two- dimensional electron gas…
Gamma-Ray Transient Monitor (GTM) is an all-sky monitor onboard the Distant Retrograde Orbit-A (DRO-A) satellite, with the scientific objective of detecting gamma-ray bursts in the energy range of 20 keV to 1 MeV. GTM is equipped with five…
We achieve high detectivity terahertz sensing using a silicon nitride nanomechanical resonator functionalized with a metasurface absorber. High performances are achieved by striking a fine balance between the frequency stability of the…
We report the on-wafer characterization of $S$-parameters and microwave noise temperature ($T_{50}$) of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 40 K and 300 K and over a range of drain-source voltages…
We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in…
$\beta$-Ga$_{2}$O$_{3}$ nanomembranes, obtained by ion-beam-assisted exfoliation, are used in the fabrication of simple metal-semiconductor-metal (MSM) structures, that are tested as photodetectors (PD) and field-effect transistors (FET).…
In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs,…
Transition Radiation Detectors (TRDs) are useful for electron identification and hadron suppression in high energy nuclear and particle physics experiments. Conventional wire-chamber TRDs face operational limitations due to space charge…
Most detector systems used for positron emission particle tracking (PEPT) are very expensive due to the use of inorganic plastic scintillators combined with a high number of readout electronic channels. This work aims to reduce the overall…
Localized residual stress and elastic strain concentrations in microelectronic devices often affect the electronic performance, resistance to thermomechanical damage, and, likely, radiation tolerance. A primary challenge for…
A heterojunction tunneling field effect transistor based on armchair graphene nanoribbons is proposed and studied using ballistic quantum transport simulation based on 3D real space nonequilibrium Green's function formalism. By using low…