Related papers: Complementary junction field-effect transistor log…
Using a field-effect transistor (FET) configuration with solid Li-ion conductor (SIC) as gate dielectric, we have successfully tuned carrier density in FeSe$_{0.5}$Te$_{0.5}$ thin flakes, and the electronic phase diagram has been mapped…
Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top-electrolyte gates, which pose experimental constraints and make…
Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the…
The ion-sensitive field-effect transistor (ISFET) is an emerging technology that has received much attention in numerous research areas, including biochemistry, medicine, and security applications. However, compared to other types of…
Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and thus a scalable quantum computer architecture. To solve signal-line bandwidth and…
The many advantages of cryogenically-cooled Single-Flux Quantum (SFQ) circuits imply that the high speed and low voltage output signals must be amplified and interfaced with standard electronics. State-of-the-art low-noise and wide-band…
We analyse the effects of applying an electric field on the critical temperature, Ts, at which superionicity appears in archetypal fast ion conductor CaF2 by means of molecular dynamics simulations. We find that the onset of superionicity…
In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid…
Inspired by recent interest in quantum computing and recent studies of cryo CMOS for control electronics, this paper presents a hybrid semiconductor-superconductor approach for engineering scalable computing systems that operate across the…
We propose a new type of a transition edge sensor based on an Al/AlOx/Ti/AlOx/Al superconductor - insulator - superconductor - insulator - superconductor (SIS'IS) structure. It exhibits sharp dependence of zero bias resistance on…
The greatest challenge in quantum computing is achieving scalability. Classical computing previously faced a scalability issue, solved with silicon chips hosting billions of fin field-effect transistors (FinFETs). These FinFET devices are…
Steep-slope $\beta$-Ga$_2$O$_3$ nano-membrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in gate dielectric stack. Subthreshold slope less than 60 mV/dec at room…
In this article, we explore a new set of circuits, that incorporate both single-flux-quantum and quantized charge-based complementary quantum logic circuits. Circuits that convert single-flux-quantum voltage pulses to quantized charge…
Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with a gate-tunable critical current. Additionally, they can feature a non-sinusoidal current-phase relation (CPR) containing…
An intermittent Josephson effect in the form of voltage and temperature oscillations in the voltage - current curves near 2 K is observed in pellets consisting of superconducting TaC nanocapsules coated with graphite. This phenomenon is…
Superconductor-based light-emitting diode (superconductor-based LED) in strong light-confinement regime are characterized as a superconductor-based three-terminal device, and its transport properties are quantitatively investigated. In the…
We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with…
Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and…
We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect hole mobility mu \~ 8 cm2/Vs, substantially higher than that observed in thin-film OFETs. The…
We study thermal fluctuations and capacitive effects on small Josephson Junction Rings (JJR) that mimics the rectification phenomena recently observed in triangle shaped mesoscopic superconductors, due to the superposition of the field…